KSD1621TTF Datasheet KSD1621TTF, KSD1621STF, KSD1621UTF | P1-P3

KSD1621 — NPN Epitaxial Silicon Transistor

KSD1621 Rev. B3 1

August 2009

KSD1621

NPN Epitaxial Silicon Transistor

Features

• High Current Driver Applications

• Low Collector-Emitter Saturation Voltage

• Large Current Capacity and Wide SOA

• Fast Switching Speed

• Complement to KSB1121

Absolute Maximum Ratings T

A

= 25°C unless otherwise noted

Mounted on Ceramic Board (250mm

2

x 0.8mm)

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage 30 V

V

CEO

Collector-Emitter Voltage 25 V

V

EBO

Emitter-Base Voltage 6 V

I

C

Collector Current 2 A

P

C

Collector Power Dissipation (T

A

= 25°C)

Derating Rate above 25°C

500

4

mW

mW/°C

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature -55 to +150 °C

SOT-89

1

1. Base 2. Collector 3. Emitter

16 21

PY WW

h

FE

grade

Year code

Weekly code

Marking

KSD1621 — NPN Epitaxial Silicon Transistor

KSD1621 Rev. B3 2

Electrical Characteristics T

A

= 25°C unless otherwise noted

h

FE

Classification

Package Marking and Ordering Information

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= 10μA, I

E

= 0 30 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= 1mA, I

B

= 0 25 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= 10μA, I

C

= 0 6 V

I

CBO

Collector Cut-off Current V

CB

= 20V, I

E

= 0 100 nA

I

EBO

Emitter Cut-off Current V

BE

= 4V, I

C

= 0 100 nA

h

FE1

h

FE2

DC Current Gain V

CE

= 2V, I

C

= 0.1A

V

CE

= 2V, I

C

= 1.5A

100

65

560

V

CE

(sat) Collector-Emitter Saturation Voltage I

C

= 1.5A, I

B

= 75mA 0.18 0.4 V

V

BE

(sat) Base-Emitter Saturation Voltage I

C

= 1.5A, I

B

= 75mA 0.85 1.2 V

f

T

Current Gain Bandwidth product V

CE

= 10V, I

C

= 50mA 150 MHz

C

ob

Output Capacitance V

CB

= 10V, I

E

= 0, f = 1MHz 19 pF

t

ON

Turn On Time *

V

CC

= 12V, V

BE

= 5V

I

B1

= -I

B2

= 25mA

I

C

= 0.5A, R

L

= 25Ω

60 ns

t

STG

Storage Time * 500 ns

t

F

Fall Time * 25 ns

Classification R S T U

h

FE

100 ~ 200 140 ~ 280 200 ~ 400 280 ~ 560

Device Device Marking Package Reel Size Tape Width Quantity

KSD1621RTF

Line 1: 1621

Line 2: R&3

SOT-89 13” -- 4,000

KSD1621STF

Line 1: 1621

Line 2: S&3

SOT-89 13” -- 4,000

KSD1621TTF

Line 1: 1621

Line 2: T&3

SOT-89 13” -- 4,000

KSD1621UTF

Line 1: 1621

Line 2: U&3

SOT-89 13” -- 4,000

KSD1621 — NPN Epitaxial Silicon Transistor

KSD1621 Rev. B3 3

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product

0.0 0.2 0.4 0.6 0.8 1.0

0.0

0.4

0.8

1.2

1.6

2.0

I

B

= 50mA

I

B

= 2mA

I

B

= 10mA

I

B

= 30mA

I

B

= 8mA

I

B

= 6mA

I

B

= 4mA

I

B

= 20mA

I

B

= 0

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.01 0.1 1 10

1

10

100

1000

V

CE

= 2V

h

FE

, DC CURRENT GAIN

I

C

[A], COLLECTOR CURRENT

0.01 0.1 1 10

0.01

0.1

1

10

I

C

= 10 I

B

V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[A], COLLECTOR CURRENT

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

V

CE

= 2V

I

C

[A], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

0.1 1 10 100

1

10

100

1000

I

E

=0

f = 1MHz

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

0.1 1

10

100

1000

V

CE

= 10V

f

T

[MHz], CURRENT GAIN-BANDWIDTH PRODUCT

I

C

[A], COLLECTOR CURRENT

KSD1621TTF

KSD1621TTF

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