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VSSB410S-E3/5BT

P1-P3P4-P4
VSSB410S
www.vishay.com
Vishay General Semiconductor
Revision: 05-Nov-13
1
Document Number: 89140
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Notes
(1)
Mounted on 14 mm x 14 mm pad areas, 1 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
Package DO-214AA (SMB)
I
F(AV)
4.0 A
V
RRM
100 V
I
FSM
80 A
E
AS
50 mJ
V
F
at I
F
= 4.0 A 0.61 V
T
J
max. 150 °C
Diode variations Single die
DO-214AA (SMB)
TMBS
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSB410S UNIT
Device marking code V4B
Maximum repetitive peak reverse voltage V
RRM
100 V
Maximum DC forward current
I
F
(1)
4.0
A
I
F
(2)
1.9
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 60 mH
E
AS
50 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C
I
RRM
1.0 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VSSB410S
www.vishay.com
Vishay General Semiconductor
Revision: 05-Nov-13
2
Document Number: 89140
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Notes
(1)
Free air, mounted on recommended PCB 1 oz. pad area. Thermal resistance R
JA
- junction to ambient
(2)
Units mounted on PCB with 14 mm x 14 mm copper pad areas. R
JM
- junction to mount
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
100 (minimum) - V
Instantaneous forward voltage I
F
= 4.0 A
T
A
= 25 °C
V
F
(1)
0.68 0.77
V
T
A
= 125 °C 0.61 0.69
Reverse current
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
1.5 - μA
T
A
= 125 °C 1.2 - mA
V
R
= 100 V
T
A
= 25 °C 7.0 250 μA
T
A
= 125 °C 3.6 20 mA
Typical junction capacitance 4.0 V, 1 MHz C
J
230 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSB410S UNIT
Typical thermal resistance
R
JA
(1)
120
°C/W
R
JM
(2)
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSB410S-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
VSSB410S-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
0
25
50
75
100
125
5.0
150
T
M
- Mount Temperature (°C)
Average Forward Rectified Curr
ent (A)
2.5
2.0
1.5
0.5
0
1.0
T
M
Measured at Terminal
3.0
4.0
3.5
4.5
0
4.8
0
3.2
Average Forward Current (A)
Average Power Loss (W)
1.2
0.8
0.4
4.4
4.0
3.6
3.2
2.8
2.4
2.0
0.4
D = t
p
/T t
p
T
D = 0.1
D = 0.5
D = 0.8
D = 1.0
2.8
2.4
2.0
1.6
D = 0.3
D = 0.2
1.6
1.2
0.8
VSSB410S
www.vishay.com
Vishay General Semiconductor
Revision: 05-Nov-13
3
Document Number: 89140
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
1
100
0
0.1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 150 °C
10
0.2
0.4
0.6
0.8
1.0
1.2
1.61.4
10
20
40
60
0.0001
0.001
0.01
0.1
1
100
80
100
Percent of Rated Peak Reverse Voltage (%)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 150 °C
30
50
70
90
Instantaneous Reverse Current (mA)
10
100
10
10
100
1000
0.1
1
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
10
1
100
1000
0.01
1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
10
0.1
Junction to Ambient
0.012 (0.305)
0.006 (0.152)
0.008
(0.2)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.096 (2.44)
0.084 (2.13)
DO-214AA (SMB)
0 (0)
Cathode Band
0.085 (2.159)
MAX.
0.220 REF.
0.086 (2.18)
MIN.
0.060 (1.52)
MIN.
Mounting Pad Layout
P1-P3P4-P4

VSSB410S-E3/5BT

Mfr. #:
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Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 4A,100V,TMBS SKY RECT.
Lifecycle:
New from this manufacturer.
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