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IRFSL4510PBF
P1-P3
P4-P6
P7-P9
P10-P10
IRFS/SL4510PbF
www.irf.com
7
Fig 23a.
Switching Time Test Circuit
Fig 23b.
Switching Time Waveforms
Fig 22b.
Unclamped Inductive Waveforms
Fig 22a.
Unclamped Inductive Test Circuit
Fig 24a.
Gate Charge Test Circuit
Fig 24b.
Gate Charge Waveform
Fig 21.
Peak
Diode Recovery
dv/dt Test
Circuit
for N-Channel
HEXFET
®
Power MOSFETs
Circuit
Layout
Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Wavef
orm
D.U.T
. V
DS
Wavef
orm
Inductor Curent
D =
P. W .
Period
*
V
GS
=
5V for Logic Level
Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
•
dv/dt controlled
by R
G
•
Driver same type
as D.U.T.
•
I
SD
controlled
by Duty Factor "D"
•
D.U.T. - Device
Under Test
D.U.T
Inductor
Current
1K
VCC
DUT
0
L
S
20K
Vds
Vgs
Id
Vgs(t
h)
Qgs
1
Qgs2
Qgd
Qgodr
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
V
DS
+
-
V
DD
DRI
VER
A
15V
20V
t
p
V
(BR)
DSS
I
AS
V
GS
V
DD
V
DS
L
D
D.U.
T
+
-
Second Pulse W
idth < 1
μ
s
Duty Factor <
0.1%
V
GS
V
DS
90%
10%
t
d(
on)
t
d(o
ff)
t
r
t
f
IRFS/SL4510PbF
8
www.irf.com
D
2
Pak
(T
O-263AB)
Part
Marking
Information
D
2
Pak
(T
O-263AB)
Package
Outline
Dimensions
are shown
in millimeters
(inches)
DA
T
E
C
O
D
E
YE
A
R
0
=
2000
WE
E
K
0
2
A =
A
S S
E MB L
Y
S I
T E
C
O
D
E
RE
C
T
IF
IE
R
IN
T
E
R
N
A
T
IO
N
A
L
PA
R
T
NU
M
B
E
R
P
=
D
E
S
I
G
N
AT E
S L
E
AD
-
F R
E
E
PR
O
DU
C
T
(
O
P
T
I
O
N
A
L
)
F
530S
I
N
TH
E
A
SSE
M
B
L
Y
L
I
N
E "
L
"
A
S
S
E
M
B
L
E
D O
N W
W
02,
2000
T
H
IS
I
S
A
N IR
F
530S
W
I
T
H
L
O
T
C
O
D
E
8024
IN
T
E
RNA
T
IO
N
A
L
LO
G
O
RE
C
T
IF
IE
R
LO
T
C
O
D
E
A
SSE
M
B
L
Y
YE
A
R
0 = 2000
PA
RT
N
UM
B
E
R
DA
T
E
C
O
DE
LI
N
E L
WE
E
K
0
2
OR
F
530S
LO
G
O
AS
S
E
M
B L
Y
LO
T
C
O
D
E
Note: For
the most current drawing
please refer to
IR website at
http://www.irf.com/package/
IRFS/SL4510PbF
www.irf.com
9
T
O-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
LO
G
O
RE
C
T
IF
IER
IN
T
E
RN
A
T
IO
N
A
L
LO
T
C
O
D
E
A
SSE
M
B
LY
LO
G
O
RE
C
T
IF
I
E
R
IN
T
E
RN
A
T
IO
NA
L
DA
T
E
C
O
DE
W
EEK 1
9
YE
A
R
7 =
1997
PA
RT
N
U
M
BE
R
A =
AS
S E
MB
L
Y
S I
T E
CODE
OR
PRO
D
U
C
T
(
O
PT
IO
N
A
L)
P
=
D
E
S I
G
N
AT E
S L
E
AD
-
F R
E
E
E
X
A
M
PL
E
:
T
HIS
IS
A
N
IRL
3
10
3L
L
O
T
C
O
DE
1789
A
SSE
M
B
LY
PA
R
T
N
U
M
B
E
R
DA
T
E
C
O
DE
W
EEK 1
9
LI
N
E
C
LO
T
C
O
D
E
YE
A
R
7 = 1997
A
S
S
E
M
B
L
E
D O
N W
W
19
, 1997
I
N
T
H
E
A
S
SE
M
B
LY
LIN
E
"
C
"
Note: For
the most current drawing
please refer to
IR website at
http://www.irf.com/package/
P1-P3
P4-P6
P7-P9
P10-P10
IRFSL4510PBF
Mfr. #:
Buy IRFSL4510PBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFET, 100V, 64A, 1 50 nC Qg, TO-262
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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Ups
TNT
EMS
Payment:
T/T
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