Electrical Characteristics Ta = 25C 3C Tr.1, Tr.2
Static Characteristics
Dynamic Characteristics
Bod
Diode Characteristi
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1
Pulse test: Ensure that the channel temperature does not exceed 150C.
*2 Measurement circuit for Turn-on Delay Time/Rise Time/Turn-off Delay Time/Fall Time
Page
ID = 3.3 A
ID = 3.3 A
1.
2.
Diode Forward Voltage
*1
VSD IS = 3.3 A, VGS = 0 V
Qg
FC8V33030L
MOS FET
Product Standards
V
1.6
0.8 1.2
3.8
nCGate-source Charge Qgs 1.4
Gate-drain Charge Qgd
Total Gate Charge
VDD = 15 V, VGS = 0 to 4.5 V,
ID = 6.5 A
VDD = 15 V, VGS = 10 to 0 V
Fall Time
*2
tf 9
ns
Rise Time
*2
tr 3
Turn-off Delay Time
*2
td(off) 24
50
Turn-on Delay Time
*2
td(on) 8 VDD = 15 V, VGS = 0 to 10 V
360
pFOutput Capacitance Coss 70
Reverse Transfer Capacitance Crss
Input Capacitance Ciss
VDS = 10 V, VGS = 0 V
f = 1 MHz
m
ID = 3.3 A, VGS = 4.5 V 22 35
2.5 V
Drain-source On-state Resistance
*1
ID = 3.3 A, VGS = 10 V
RDS(on)1
RDS(on)2
15 20
Gate-source Threshold Voltage Vth ID = 0.48 mA, VDS = 10 V 1
10
A
Gate-source Leakage Current IGSS
VGS =
16 V, VDS = 0 V 10
A
Zero Gate Voltage Drain Current IDSS VDS = 33 V, VGS = 0 V
Typ Max Unit
Drain-source Breakdown Voltage VDSS ID = 1 mA, VGS = 0 V 33 V
Parameter Symbol Conditions
Min
2of6
