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VS-HFA16TB120-N3

P1-P3P4-P6P7-P8
VS-HFA16TB120PbF, VS-HFA16TB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 18-Aug-11
1
Document Number: 94060
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
HEXFRED
®
Ultrafast Soft Recovery Diode, 16 A
FEATURES
• Ultrafast and ultrasoft recovery
• Very low I
RRM
and Q
rr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16TB120... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120... is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the HEXFRED
®
product line
features extremely low values of peak recovery current
(I
RRM
) and does not exhibit any tendency to “snap-off”
during the t
b
portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16TB120... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
PRODUCT SUMMARY
Package TO-220AC
I
F(AV)
16 A
V
R
1200 V
V
F
at I
F
3.0 V
t
rr
typ. 30 ns
T
J
max. 150 °C
Diode variation Single die
TO-220AC
Anode
1
3
Cathode
Base
cathode
2
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
R
1200 V
Maximum continuous forward current I
F
T
C
= 100 °C 16
ASingle pulse forward current I
FSM
190
Maximum repetitive forward current I
FRM
64
Maximum power dissipation P
D
T
C
= 25 °C 151
W
T
C
= 100 °C 60
Operating junction and storage temperature range T
J
, T
Stg
- 55 to + 150 °C
VS-HFA16TB120PbF, VS-HFA16TB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 18-Aug-11
2
Document Number: 94060
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 μA 1200 - -
V
Maximum forward voltage V
FM
I
F
= 16 A
See fig. 1
-2.53.0
I
F
= 32 A - 3.2 3.93
I
F
= 16 A, T
J
= 125 °C - 2.3 2.7
Maximum reverse
leakage current
I
RM
V
R
= V
R
rated
See fig. 2
-0.7520
μA
T
J
= 125 °C, V
R
= 0.8 x V
R
rated - 375 2000
Junction capacitance C
T
V
R
= 200 V See fig. 3 - 27 40 pF
Series inductance L
S
Measured lead to lead 5 mm from package
body
-8.0-nH
DYNAMIC RECOVERY CHARACTERISTICS (T
J
= 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5 and 10
t
rr
I
F
= 1.0 A, dI
F
/dt = 200 A/μs, V
R
= 30 V - 30 -
nst
rr1
T
J
= 25 °C
I
F
= 16 A
dI
F
/dt = 200 A/μs
V
R
= 200 V
- 90 135
t
rr2
T
J
= 125 °C - 164 245
Peak recovery current
See fig. 6
I
RRM1
T
J
= 25 °C - 5.8 10
A
I
RRM2
T
J
= 125 °C - 8.3 15
Reverse recovery charge
See fig. 7
Q
rr1
T
J
= 25 °C - 260 675
nC
Q
rr2
T
J
= 125 °C - 680 1838
Peak rate of fall of
recovery current during t
b
See fig. 8
dI
(rec)M
/dt1 T
J
= 25 °C - 120 -
A/μs
dI
(rec)M
/dt2 T
J
= 125 °C - 76 -
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
0.063" from case (1.6 mm) for 10 s - - 300 °C
Thermal resistance,
junction to case
R
thJC
- - 0.83
K/W
Thermal resistance,
junction to ambient
R
thJA
Typical socket mount - - 80
Thermal resistance,
case to heatsink
R
thCS
Mounting surface, flat, smooth and greased - 0.50 -
Weight
-2.0- g
-0.07- oz.
Mounting torque
6.0
(5.0)
-
12
(10)
kgf · cm
(lbf · in)
Marking device Case style TO-220AC HFA16TB120
VS-HFA16TB120PbF, VS-HFA16TB120-N3
www.vishay.com
Vishay Semiconductors
Revision: 18-Aug-11
3
Document Number: 94060
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward
Current
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
94060_01
V
FM
- Forward Voltage Drop (V)
0
0.1
1
100
2
468
I
F
- Instantaneous Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
200 600
400
0.1
0.01
94060_02
1
10
100
1000
800
1000
1200
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
100
1 100 1000
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
94060_03
10
1
10
1000
10 000
T
J
= 25 °C
0.1
1
0.00001 0.0001 0.001 0.01 0.1
1
t
1
- Rectangular Pulse Duration (s)
Z
thJC
- Thermal Response
0.01
94060_04
10
100
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
Single pulse
(thermal response)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
P1-P3P4-P6P7-P8

VS-HFA16TB120-N3

Mfr. #:
Buy VS-HFA16TB120-N3
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers RECOMMENDED ALT 78-VS-HFA16TB120-M3
Lifecycle:
New from this manufacturer.
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