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ZXTP25012EFHTA
P1-P3
P4-P6
P7-P8
ZXTP25012EFH
Issue 2 - October 2007
4
www
.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
T
yp.
Max.
Unit
Conditions
Collector
-base breakdown
voltage
BV
CBO
-12
-35
V
I
C
= -100
A
Collector
-emitter breakdown
voltage (ba
se open)
BV
CEO
-12
-25
V
I
C
= -10mA
(*)
NOTES:
(*)
Measured under pulsed
conditions. Pu
lse width
ⱕ
300
s; duty c
ycle
ⱕ
2%.
Emitter
-base breakd
own
voltage
BV
EBO
-7
-8.5
V
I
E
= -100
A
Collector
-base cut-off
current
I
CBO
<-1
-50
nA
V
CB
= -12V
-0.5
AV
CB
= -12V
, T
amb
= 100°C
Emitter-base cut-off curren
t
I
EBO
<-1
-50
nA
V
EB
= -5.6V
Collector
-emitter satura
tion
voltage
V
CE(sat)
-50
-65
mV
I
C
= -1A, I
B
= -100mA
(*)
-150
-260
mV
I
C
= -1A, I
B
= -10mA
(*)
-175
-350
mV
I
C
= -2A, I
B
= -40mA
(*)
-160
-210
mV
I
C
= -4A, I
B
= -400mA
(*)
Base-emitter saturation
voltage
V
BE(sat)
-970
-1050
mV
I
C
= -4A, I
B
= -400mA
(*)
Base-emitter turn-on vo
ltage
V
BE(on)
-825
-950
mV
I
C
= -4A, V
CE
= -2V
(*)
Static forward current
transfer ratio
h
FE
500
800
1500
I
C
= -10mA, V
CE
= -2V
(*)
300
450
I
C
= -1A, V
CE
= -2V
(*)
50
100
I
C
= -4A, V
CE
= -2V
(*)
T
ransition frequency
f
T
310
MHz
I
C
= -50mA, V
CE
= -10V
f
= 100MHz
Output capacitance
C
obo
16.9
pF
V
CB
= -10V
, f
= 1MHz
(*)
Delay time
t
d
41
ns
V
CC
= -10V
I
C
= -1A,
I
B1
= I
B2
= -10mA
Rise time
t
r
62
ns
Storage time
t
s
179
ns
Fall time
t
f
65
ns
ZXTP25012EFH
Issue 2 - October 2007
5
www
.zetex.com
© Zetex Semiconductors plc 2007
T
ypical characteristics
ZXTP25012EFH
Issue 2 - October 2007
6
www
.zetex.com
© Zetex Semiconductors plc 2007
Package outline - SOT23
Note:
Controlling dimensions are in millimeters. Ap
proximate dimen
sions are provided in inches
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Min.
Max.
Min.
Max.
Min.
Max.
Max.
Max.
A
-
1.12
-
0.044
e1
1.90 NOM
0.075 NOM
A1
0.01
0.10
0.0004
0.004
E
2.10
2.64
0.083
0.104
b
0.
30
0.50
0
.012
0
.020
E1
1.20
1
.40
0.047
0.
055
C
0.085
0.120
0.003
0.008
L
0.25
0.62
0.018
0.024
D
2.80
3
.04
0.110
0.120
L1
0.4
5
0.62
0.0
18
0.024
e
0
.
9
5
N
O
M
0
.
0
3
7
5
N
O
M
-----
E
e
L
e1
D
A
c
E1
L1
A1
b
3 leads
P1-P3
P4-P6
P7-P8
ZXTP25012EFHTA
Mfr. #:
Buy ZXTP25012EFHTA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP 12V HIGH GAIN
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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