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TFA9810T/N1,112

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P29
TFA9810_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 20 February 2008 16 of 29
NXP Semiconductors
TFA9810
Audio amplifier 2 x 12 W
[1] Current limiting concept: in overcurrent condition no interruption of the audio signal in case of impedance drop.
12.2 Dynamic characteristics
I
I
input current V
I
= 5 V - 1 20 µA
SO/OL input
V
IL
LOW-level input voltage with respect to V
SSD
- - 0.4 V
V
IH
HIGH-level input voltage with respect to V
SSD
3 4 4.5 V
STABI
V
STABI
voltage on pin STABI with respect to V
SS
10 11 12 V
Comparator full-differential input stage
V
offset(i)(eq)
equivalent input offset
voltage
--1mV
20 Hz < f < 20 kHz - - 15 µV
V
cm
common mode voltage V
SSA
+ 3 - V
DDA
−1V
I
IB
input bias current - - 1 µA
OverTemperature Protection (OTP)
T
prot
protection temperature 150 - - °C
OverVoltage Protection (OVP)
V
th(ovp)
overvoltage protection
threshold voltage
level internal fixed 20 21.5 23 V
UnderVoltage Protection (UVP)
V
P(uvp)
undervoltage protection
supply voltage
level internal fixed 7 7.5 8 V
OverCurrent Protection (OCP)
I
O(ocp)
overcurrent protection
output current
[1]
3 3.5 - A
Window Protection (WP)
V
O
output voltage high level - V
DDA
− 1- V
low level - V
SSA
+ 1 - V
Table 9. Static characteristics
…continued
T
amb
= 25
°
C; V
P
= 12 V; f
osc
= 550 kHz; Figure 33 unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Table 10. Dynamic characteristics
T
amb
= 25
°
C; V
P
= 12 V; R
L
= 8
Ω
; Figure 33 unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
PWM output
t
r
rise time - 10 - ns
t
f
fall time - 10 - ns
TFA9810_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 20 February 2008 17 of 29
NXP Semiconductors
TFA9810
Audio amplifier 2 x 12 W
[1] High-side and low-side power switch have the same series resistance.
[2] Output power measured across the loudspeaker load. Output power is measured indirectly via R
DSon
.
12.3 AC characteristics measured in a typical application
t
resp
response time transition PWM output from
LOW to HIGH
V
I
= 70 mV
V
I
= 3.3 V
-
-
60
50
-
-
ns
ns
transition PWM output from
HIGH to LOW
V
I
= 70 mV
V
I
= 3.3 V
-
-
60
50
-
-
ns
ns
t
w(min)
minimum pulse width PWM output - 60 - ns
R
DSon
drain-source on-state
resistance
[1]
- 0.28 0.35 Ω
η
po
output power
efficiency
output power 2x9Winto 8 Ω.
P
o
= P
o(nom)
[2]
87 89 - %
Table 10. Dynamic characteristics
…continued
T
amb
= 25
°
C; V
P
= 12 V; R
L
= 8
Ω
; Figure 33 unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Table 11. AC characteristics measured in typical application
T
amb
= 25
°
C; V
P
= 12 V; R
L
= 8
Ω;
f
osc
= 550 kHz; Figure 33 unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V
P
supply voltage V
P
= V
DDPx
− V
SSPx
8 1220V
P
o(RMS)
RMS output power R
L
= 8 Ω; V
P
= 12 V;
THD = 10 %; Two channel
driven; no heat sink required.
- 9.5 - W
P
o
output power V
P
= 12 V; R
L
= 8 Ω
THD = 10 % 8.5 9.5 - W
THD = 1 % 6.5 7.5 - W
V
P
= 14 V; R
L
= 8 Ω;
THD = 10 %; thermally limited
-12-W
V
P
= 16 V; R
L
= 8 Ω;
THD = 10 %; thermally limited
-15-W
V
P
= 12 V; R
L
= 6 Ω;
THD = 10 %; thermally limited
-12-W
V
P
= 12 V; R
L
= 4 Ω;
THD = 10 %; thermally limited
-15-W
THD+N total harmonic
distortion-plus-noise
P
o
is 1 W; f = 1 kHz; AES17
brick-wall filter
- 0.04 0.1 %
η
po
output power
efficiency
P
o
= 9 W 87 89 - %
G
v(cl)
closed-loop voltage
gain
V
I
= 100 mV (RMS); f
i
= 1 kHz 19 19.7 21 dB
V
n(o)
output noise voltage Inputs shorted;
AES17 brick-wall filter
- 150 - µV
TFA9810_3 © NXP B.V. 2008. All rights reserved.
Product data sheet Rev. 03 — 20 February 2008 18 of 29
NXP Semiconductors
TFA9810
Audio amplifier 2 x 12 W
[1] Minimum value determined by R5, R10, R17, R22 equalling +1 % and R7, R14, R18, R20 equalling −1 %.
13. Quality specification
In accordance with SNW-FQ-611-E, ‘if this type is used as an audio amplifier’. The
number of the quality specification can be found in the Quality Reference Handbook. The
handbook can be ordered using the code 9398 510 63011.
14. Application information
14.1 Output power estimation
For BTL configuration the output power just before clipping can be estimated using
Equation 1:
(1)
Where,
• V
P
= supply voltage (V
DDPx
− V
SSPx
) [V]
• R
L
= load resistance [Ω]
• R
DSon
= drain-source on-state resistance [Ω]
• R
s
= series resistance [Ω]
• P
o0.5 %
= output power at the THD level of 0.5 % [W]
The output power at 10 % THD can be estimated by using Equation 2:
(2)
Figure 26 and Figure 27 below show the estimated output power at THD = 0.5 % and
THD = 10 % as a function of the BLT supply voltage for different load impedances.
S/N signal-to-noise ratio V
o
= 10 V (RMS); gain 20 dB - 96 - dB
SVRR supply voltage ripple
rejection
V
ripple
= 2 V
(p-p)
; f
i
= 1 kHz
[1]
34 45 - dB
α
cs
channel separation P
o
= 1 W; f
i
= 1 kHz 55 70 - dB
Table 11. AC characteristics measured in typical application
…continued
T
amb
= 25
°
C; V
P
= 12 V; R
L
= 8
Ω;
f
osc
= 550 kHz; Figure 33 unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
BTL : P
o0.5 %
R
L
R
L
2+ R
DSon
R
s
+()×
------------------------------------------------------
V
P
×
2
2R
L
×
---------------------------------------------------------------------------------
=
P
o10 %
1.25 P×
o0.5 %
=
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P24P25-P27P28-P29

TFA9810T/N1,112

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Buy TFA9810T/N1,112
Manufacturer:
NXP Semiconductors
Description:
Audio Amplifiers 2X15W BTL POWER
Lifecycle:
New from this manufacturer.
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