CRY62 to CRZ39
2014-10-09
TOSHIBA Zener Diode Silicon Epitaxial Type
CRY62 to CRZ39
○ Surge absorber
Average power dissipation : P = 0.7 W
Zener voltage : V
Z
= 6.2 to 39 V
Suitable for compact assembly due to small surface-mount package
“S−FLAT
TM
” (Toshiba package name)
Absolute Maximum Ratings
(Ta = 25
°C
)
Characteristic Symbol Rating Unit
Power dissipation P 0.7 W
Junction temperature T
j
−40 to 150 °C
Storage temperature range T
stg
−40 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Land Pattern Dimensions (reference only)
Unit
JEDEC ―
JEITA ―
TOSHIBA 3-2A1S
Start of commercial production
1999-09