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V30DL45HM3_A/I

P1-P3P4-P5
V30DL45-M3, V30DL45HM3
www.vishay.com
Vishay General Semiconductor
Revision: 05-May-15
1
Document Number: 87788
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Low-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.28 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code; base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-263AC (SMPD)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,.....)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: as marked
Note
(1)
With heatsink
PRIMARY CHARACTERISTICS
I
F(AV)
30 A
V
RRM
45 V
I
FSM
240 A
V
F
at I
F
= 30 A (T
A
= 125 °C) 0.51 V
T
J
max. 150 °C
Package TO-263AC (SMPD)
Diode variations Single die
Top View Bottom View
TMBS
®
eSMP
®
Series
TO-263AC (SMPD)
K
1
2
PIN 1
K
HEATSINK
PIN 2
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30DL45-M3, V30DL45HM3 UNIT
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum average forward rectified current (fig. 1) I
F(AV)
(1)
30 A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
200 A
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V30DL45-M3, V30DL45HM3
www.vishay.com
Vishay General Semiconductor
Revision: 05-May-15
2
Document Number: 87788
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width 5 ms
Notes
(1)
The heat generated must be less than the thermal conductivity from junction-to-ambient: dP
D
/dT
J
< 1/R
JA
(2)
Free air, without heatsink
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.39 -
V
I
F
= 15 A 0.47 -
I
F
= 30 A 0.57 0.65
I
F
= 5 A
T
A
= 125 °C
0.28 -
I
F
= 15 A 0.38 -
I
F
= 30 A 0.51 0.60
Reverse current V
R
= 45 V
T
A
= 25 °C
I
R
(2)
-3000μA
T
A
= 125 °C 27 70 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V30DL45-M3, V30DL45HM3 UNIT
Typical thermal resistance
R
JC
1.1
°C/W
R
JA
(1)(2)
45
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
V30DL45-M3/I 0.54 I 2000/reel 13" diameter plastic tape and reel
V30DL45HM3/I
(1)
0.54 I 2000/reel 13" diameter plastic tape and reel
V30DL45HM3_A/I
(1)
0.54 I 2000/reel 13" diameter plastic tape and reel
0
5
10
15
20
25
30
35
0 25 50 75 100 125 150
Average Forward Rectied Current (A)
Case Temperature (°C)
Rth
JA
=45
o
C/W
Rth
JA
=Rth
JC
=1.1
o
C/W
0
2
4
6
8
10
12
14
16
18
20
22
0 4 8 12 16 20 24 28 32 36
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
T
D = t
p
/T
t
p
V30DL45-M3, V30DL45HM3
www.vishay.com
Vishay General Semiconductor
Revision: 05-May-15
3
Document Number: 87788
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Thermal Resistance Junction-to-Ambient vs.
Copper Pad Areas
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p
-p
0.1
1
10
100
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
20
25
30
35
40
45
50
1 2 3 4 5 6 7 8 9
Thermal Resistance (°C/W)
Copper Pad Areas (cm
2
)
S(cm
2
)
Epoxy printed circiut
board FR4 copper
thickness = 70 μm
P1-P3P4-P5

V30DL45HM3_A/I

Mfr. #:
Buy V30DL45HM3_A/I
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers TMBS 45V Vrrm eSMP AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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