SA17-E3/73

DS30669 Rev. 3 - 3
1 of 8
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DLP3V3DTZ
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGNS
DLP3V3DTZ
DUAL UNIDIRECTIONAL AND SINGLE BIDIRECTIONAL TVS
General Descriptions
This Transient Voltage Suppressor (TVS) diode is designed for
dual unidirectional or single bidirectional protection for data
lines, components or circuits from damage due to electrostatic
discharge (ESD), cable discharge events(CDE) and lightning
(see IPPM below). It offers high ESD capability, low reverse
leakage, low junction capacitance and low clamping voltage
over range of temperature. They are suitable for computers,
communication systems, hand held portables, high density PC
boards and peripherals.
Features
372 Watts Peak Pulse Power (tp=8/20 μS)
AEC-Q101 (Human Body Model- 8kV, Machine Model-400V)
and 25 kV(air)/ 8 kV(contact) as per IEC61000-4-2(ESD)
Dual Unidirectional and Single Bidirectional Configuration
Lead Free By Design/ROHS Compliant (Note 2)
"Green" Device (Note 3 & 4)
Surface Mount Package Suited for Automated Assembly
Mechanical Data
Case: SOT-23
Case Material: "Green” Molding Compound (Molded
Plastic). UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Fig. 1
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 6
Ordering Information: See Page 6
Weight: 0.008 grams (approximate)
Absolute Maximum Ratings @T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Peak Pulse Power (tp=8/20μS)
Unidirectional
P
pp
372
W
Bidirectional 145
Continuous Power Dissipation (Note1)
P
D
300 mW
Maximum Peak Pulse Current (tp=8/20 μS)
Unidirectional
I
PP
40
A
Bidirectional 15
Forward Surge Current (8.3 ms half sine-wave)
I
FSM
10.5 A
ESD per IEC 6100--4-2(air)
V
pp
± 25
kV
ESD per IEC 6100--4-2(contact)
± 8
Thermal Characteristics
Characteristic Symbol Value Unit
Operating and Storage Junction Temperature Range
T
j
, T
stg
-55 to +150
°
C
Thermal Resistance, Junction to Ambient Air (Note1)
R
θ
JA
420 °C/W
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; as per Diodes Inc. suggested pad layout document AP02001 on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
Fig. 1: Schematic and Pin Configuration
D2D1 D2D1
Line1_in
N/C
GND
Line2_in Line_in GND
A. Unidirectional Protection
for two Lines
B. Bidirectional Protection
for a single Line
12
3
12
3
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DS30669 Rev. 3 - 3
2 of 8
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DLP3V3DTZ
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGNS
Electrical Characteristics @T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Rated Reverse Standoff Voltage
V
RWM
3.3 V Pin 1 to 3 or Pin 2 to 3
Breakdown Voltage
V
BR
4.5
V
Pin 1 to 3 or Pin 2 to 3 @ I
T
= 1mA
Forward Voltage
V
F
0.8
V
Pin 3 to 1 or Pin 3 to 2, I
F
= 10mA
Reverse Leakage Current @V
RWM
I
R
0.095 mA Pin 1 to 3 or Pin 2 to 3
Clamping Voltage (Note 5)
Unidirectional
V
c
6.0
V
I
pp
= 1A (Pin 1 to 3 or Pin 2 to 3
Bidirectional
7.0
I
pp
=1A (Pin 1 to 2 or Pin 2 to 1,Pin 3 = nc)
Unidirectional
9.3
V
I
pp
= 40A (Pin 1 to 3 or Pin 2 to 3)
Bidirectional
9.666
I
pp
=15A (Pin 1 to 2 or Pin 2 to 1, Pin 3 = nc)
Junction Capacitance
Unidirectional
C
j
420
pF
V
R
= 0V, f = 1 MHz
Bidirectional
210
Unidirectional
230
pF
V
R
= 3.3V, f = 1 MHz
Bidirectional
115
Dynamic Resistance @ I
pp
(large signal)
Unidirectional
R
d
0.115
Ω
I
pp
= 40A,Vc = 9.3V,V
BR
= 4.5V
(Pin 1 to 3 or 2 to 3)
Dynamic Impedance
(small signal)
Unidirectional
Z
Zt
380
Ω
I
R
= 1 mA, f = 1 KHz (Pin 1 to 3 or 2 to 3)
47
Ω
I
R
= 5 mA, f = 1 KHz (Pin 1 to 3 or 2 to 3)
Temperature Coefficient Unidirectional
θ
vz
-1.07
mV/°C
I
R
= 5 mA (Pin 1 to 3 or 2 to 3)
Notes: 5. Clamping voltage value is based on a tp = 8/20 μS peak pulse current (Ipp) waveform.
Typical Characteristics @T
amb
= 25°C unless otherwise specified
t , PULSE DECAY TIME ( S)
Fig. 2 Unidirectional Non-Repetitive Peak Pulse
Power vs. Pulse Duration or Pulse Width
d
μ
372 W, 8/20 S waveform
μ
0
t, TIME ( s)
Fig. 3 Pulse Waveform
μ
20 40
60
100
50
0
I , PEAK PULSE CURRENT (%I )
PppP
DS30669 Rev. 3 - 3
3 of 8
www.diodes.com
DLP3V3DTZ
© Diodes Incorporated
NOT RECOMMENDED FOR NEW DESIGNS
% OF RATED POWER OR I
pp
T , AMBIENT TEMPERATURE (°C)
Fig. 4 Power Derating Curve
A
Peak Pulse Power
8/20 s
μ
V , CLAMPING VOLTAGE (V)
c
I , PEAK PULSE CURRENT (A)
Fig. 5 Clamping Voltage vs. Peak Pulse Current
pp
05
10 15
20
25 30 35 40 45
Unidirectional
Bidirectional
Single TVS Diode Characteristics:
200
220
240
260
280
300
320
380
360
340
400
C
,
C
A
P
A
C
I
T
AN
C
E (p
F
)
j
V , REVERSE VOLTAGE (V)
Fig. 6 Junction Capacitance vs. Reverse Voltage
R
f = 1MHz
V , REVERSE VOLTAGE (V)
Fig. 7 Leakage Current vs. Reverse Voltage
R
I (uA) Ave @ -55°C
R
I , LEAKAGE CURRENT ( A)
R
μ
V , FORWARD VOLTAGE (V)
Fig. 8 Typical Forward Characteristic
F
I, F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
0
0.2 0.4
0.6
0.8 1 1.2
Ave V (V) @ -55°C
F
V , REVERSE VOLTAGE (V)
Fig. 9 Typical Reverse Characteristic
R
I , LEAKA
G
E
C
U
R
R
EN
T
(mA)
R

SA17-E3/73

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
ESD Suppressors / TVS Diodes RECOMMENDED ALT 625-SA17A-E3/73
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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