STCC05-BD4 Datasheet STCC05-BD4 | P4-P6

STCC05-B

4/13

■ The buzzer driver with enable control

The MCU can excite a warning buzzer with a 50% PWM signal. The buzzer driver amplifies this signal in

current and translates it from the 5V MCU output to the V

PS

supply to produce the right sound level from

the buzzer.

The output stage is made of a NPN transistor, a PNP transistor and two 1kΩ resistors.

The NPN transistor, referred to the power ground COM, is controlled by the input IN

BZ

; its collector is con-

nected to the output BZ

1

. The input IN

BZ

is driven by a simple push-pull MCU buffer.

The PNP transistor, referred to the V

PS

polarity, is controlled by the input EN

BZ

; and its collector is con-

nected to the output BZ

2

through a 1kΩ resistor. The input EN

BZ

is driven by a simple push-pull MCU

buffer.

The pin BZ

2

is the supply terminal of the buzzer; and the circuit has a DC current rating of 9mA and the

PWM section runs from 10Hz up to 5kHz.

A 1kΩ resistor R

BZ

is connected between the BZ

1

and BZ

2

pins to discharge the buzzer periodically. More-

over, the addition of an external capacitor-resistor network on BZ

2

pin will allow the buzzer to turn on and

off smoothly when the pin EN

BZ

is toggling.

■ The speed sensor level shifter

The OUT

S

signal is generated by an electronic signal such as the indoor fan speed clock issued of a Hall

Effect sensor or a door switch signal and is transmitted to the MCU. As the IN

S

input may be disturbed; a

spike suppressor and a simple EMI filter are added to increase the input robustness. The output signal

OUT

S

is not inverted with respect to the input signal IN

S

.

Demagnetizing Diode

Relay

Transistor

V

PS

IN

I

RL

I

V

IN

10 kΩ

4kΩ

BZ

1

BZ

2

V

PS

EN

BZ

IN

BZ

V

IN

R

OH

=1kΩ

R

BZ

=

1kΩ

10 kΩ

OUT

S

IN

S

V

DD

EMI

Filter

50 kΩ

V

DD

500Ω

50 kΩ

STCC05-B

5/13

Table 2: Absolute Ratings (limiting values)

Table 3: Electromagnetic Compatibility Ratings

(T

J

= 25°C, according to typical application diagram of page 1, unless otherwise specified)

Table 4: Thermal Resistance

Symbol Pin Parameter name & conditions Value Unit

V

DD

V

DD

Output supply voltage - 0.3 to 6 V

V

PS

V

PS

, IN

S

Power supply voltage, level shifter input - 0.3 to 20 V

V

SYN

SYN ZVS input voltage, R

ZV

= 15kΩ - 1 to 20 V

V

MO

BZ

1

, BZ

2

,

RL

x

, x = 1 to 4

Output voltage

- 0.3 to

V

PS

+ 0.3

V

I

IN

1

, IN

2

, IN

3

Input logic voltage

- 0.3 to

V

DD

+ 0.3

V

O

ZVS, OUT

S

, /RST

Output logic voltage

- 0.3 to

V

DD

+ 0.3

V

I

M

V

PS

Maximum sourced current pulse, tp = 10ms 500 mA

RL

x

, x = 1 to 3

Maximum sunk driver current pulse, tp = 10ms 60 mA

Maximum DC sunk current 50 mA

RL

4

Maximum sunk driver current pulse, tp = 10ms 160 mA

Maximum DC sunk current 150 mA

RL

x

, x = 1 to 4 Maximum diver diode reverse current 1 mA

I

BZ AV

BZ

1

, BZ

2

Average output current ± 2 mA

I

BZ PK

BZ

1

, BZ

2

Peak output current, tp = 50µs ± 50 mA

ΣI

M

RL

x

, l = 1 to 4

Maximum DC sunk current in all relay drivers

V

PS

= 16V, T

AMB

= 70°C, I

DD

= 50mA, DIP-20

220

mA

Maximum DC sunk current in all relay drivers

V

PS

= 16V, T

AMB

= 85°C, I

DD

= 25mA, DIP-20

300

P

DIS

All Maximum dissipation, DIP-20, T

AMB

= 70°C 0.90 W

T

AMB

AII Operating ambient temperature - 20 to 85 °C

T

J

All

Operating junction temperature - 10 to 150 °C

Storage junction temperature - 25 to 150 °C

Symbol Node Parameter name & conditions Value Unit

V

ESD

All pins ESD protection, MIL-STD 883 method 3015, HBM model ± 2

kV

V

ESD

IN

S

, SYN,

V

PS

, V

DD

ESD protection, IEC 61000-4-2, per intput, in air

(1)

± 2

ESD protection, IEC 61000-4-2, per intput, in contact

(1)

± 2

V

PPB

All pins

Total peak pulse voltage Burst, IEC 61000-4-4,

(2)

± 4

Note 1: System oriented test circuit with R

ZV

= 15kΩ, R

INS

= 2.2kΩ and C

DD

= C

PS

= 100nF

Note 2: System oriented test circuit; refer to application section

Symbol Parameter Value Unit

R

th(j-a)

DIP-20 thermal resistance junction to ambient

Single PCB with a copper thickness = 35µm and surface S

CU

= 0.5cm

2

90 °C/W

STCC05-B

6/13

Table 5: Electrical Characteristics (T

J

= 25°C, V

CC

= 12V, unless otherwise specified)

Symbol Pin Name Conditions Min. Typ Max. Unit

Voltage supply

V

DD

V

DD

Output voltage supply

I

DD

= 5 to 40mA

T

amb

= 0 to 70°C

V

PS

= 9 to 16V

C

DD

= 100µF

V

IN1 to 4

= 0V

4.75 5 5.25 V

V

PS

V

PS

Input supply voltage 7 18 V

I

SQ

V

PS

Quiescent supply current V

DD

= 5V, I

DD

= 0 (open) 1.3 2 mA

I

IN_SC

V

PS

Limiting input current

V

DD

= 0V

Output in short circuit

50 80 120 mA

T

OFF

V

DD

Shutdown temperature 170 °C

∆T V Releasing thermal hysteresis 15 °C

Reset circuit

V

H

V

DD

Disabling reset threshold 3.4 3.75 4

VV

L

Enabling reset threshold 3.1 3.4 3.6

V

HYS

Threshold hysteresis 0.35

T

UP

/RST

Disabling reset delay time

C

UP

= 100nF, V

TH

= V

H

/2,

R

UP

= 100kΩ

200 400 800

µs

T

DW

Enabling reset delay time

C

UP

= 100nF, V

TH

= V

L

/2,

R

UP

= 100kΩ

100 200 400

Zero Voltage synchronization circuit

T

D

ZVS Transition filtering time Rising and falling step 10 30 70 µs

V

TH

SYN Transition threshold 0.6 1.1 1.4 V

I

SYN

SYN Input nominal current

V

SYN

= 5V 0.3

mA

V

SYN

= 18V 0.9 1.5

Level shifter, zero voltage synchronization, reset circuits

V

OH

LVOUT

/RST

ZVS

High level output voltage 0.8 V

DD

V

OL

Low level output voltage 0.2 V

DD

V

Relay coil drivers

I

IN4

IN

4

Input activating current V

IN4

= 5V 0.85 1.4 mA

V

ON

RL

4

On state output voltage I

ON

= 150mA, V

IN4

> 3.1V 1 1.2 V

I

INx

IN

1 to 3

Input activating current V

INx

= 5V 0.85 1.4 mA

V

ON

RL

1 to 3

On state output voltage I

ON

= 50mA, V

INx

> 3.1V 1 1.2 V

V

RL H

RL

1 to 4

Off state output voltage V

INx

< 50.8V, R

L

= 580Ω 0.9 V

PS

V

PS

V

INx

IN

1 to 4

Transition threshold 0.8 1.9 3.1 V

Buzzer driver with enable control

V

INBZ

IN

BZ

Input muting voltage 0.8 1.5 3.1 V

F

BUZ

Buzzer PWM frequency Duty cycle = 50% 0.01 5 kHz

R

OH

BZ

2

On state output resistance V

INBZ

= 0V, V

ENBZ

> 3.1V,

I

BZ2

= 5mA

1

kΩ

V

ON

BZ

1

On state output voltage I

ON

= 25mA, V

INBZ

> 3.1V,

V

ENBZ

= 0V, t

p

= 50µs

11.4 V

V

ENBZ

EN

BZ

Enable threshold voltage 0.8 2 3.1 V

R

BZ

1

- BZ

2

Buzzer resistance 1 kΩ

Speed sensor level shifter

V

INS H

IN

S

High level detection 7 18 V

V

INS L

Low level detection 0.8 V

I

INS

Internal input current V

INS

= 12V 500 800 µA

STCC05-BD4

STCC05-BD4

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