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CNY17-1X001

P1-P3P4-P6P7-P9
CNY17
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 08-Jan-14
1
Document Number: 83606
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, with Base Connection
DESCRIPTION
The CNY17 is an optically coupled pair consisting of a
gallium arsenide infrared emitting diode optically coupled to
a silicon NPN phototransitor.
Signal information, including a DC level, can be transmitted
by the device while maintaining a high degree of electrical
isolation between input and output.
The CNY17 can be used to replace relays and transformers
in many digital interface applications, as well as analog
applications such as CRT modulation.
FEATURES
• Isolation test voltage: 5000 V
RMS
• Long term stability
• Industry standard dual-in-line package
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
Safety application model number covering all products in
this datasheet is CNY17. This model number should be used
when consulting safety agency documents.
• UL file no. E52744
• cUL tested to CSA 22.2 bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5)
• BSI IEC 60950, IEC 60065
• FIMKO EN60950
• CQC GB8898-2011
Note
(1)
Also available in tubes, do not put T on the end.
B
C
E
A
C
NC
1
2
3
6
5
4
i179004-14
ORDERING INFORMATION
CNY 1 7 - # X 0 # # T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 CNY17-1 CNY17-2 CNY17-3 CNY17-4
DIP-6, 400 mil, option 6 CNY17-1X006 CNY17-2X006 CNY17-3X006 CNY17-4X006
SMD-6, option 7 CNY17-1X007T
(1)
CNY17-2X007T
(1)
CNY17-3X007T
(1)
CNY17-4X007T
(1)
SMD-6, option 9 CNY17-1X009T
(1)
CNY17-2X009T
(1)
CNY17-3X009T
(1)
CNY17-4X009T
(1)
VDE, UL, cUL, BSI, FIMKO 40 to 80 63 to 125 100 to 200 160 to 320
DIP-6 CNY17-1X001 CNY17-2X001 CNY17-3X001 CNY17-4X001
DIP-6, 400 mil, option 6 CNY17-1X016 CNY17-2X016 CNY17-3X016 CNY17-4X016
SMD-6, option 7 CNY17-1X017 CNY17-2X017T
(1)
CNY17-3X017T
(1)
CNY17-4X017T
(1)
SMD-6, option 9 - CNY17-2X019T
(1)
--
7.62 mm 10.16 mm
> 8 mm
8 mm typ.
Option 7
Option 6
Option 9
DIP-6
CNY17
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 08-Jan-14
2
Document Number: 83606
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
60 mA
Forward surge current t
p
≤ 10 μs I
FSM
2.5 A
LED power dissipation at 25 °C P
diss
100 mW
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Emitter base breakdown voltage BV
EBO
7V
Collector current
I
C
50 mA
t
p
/T = 0.5, t
p
≤ 10 ms I
C
100 mA
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage between emitter and detector t = 1 min V
ISO
5000 V
RMS
Storage temperature T
stg
-55 to +150 °C
Operating temperature T
amb
-55 to +110 °C
Soldering temperature
(1)
2 mm from case, ≤ 10 s T
sld
260 °C
Total power dissipation P
diss
250 mW
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 60 mA V
F
1.39 1.65 V
Breakdown voltage I
R
= 10 μA V
BR
6V
Reverse current V
R
= 6 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
Thermal resistance R
th
750 K/W
0
50
100
150
200
250
300
0 20 40 60 80 100 120
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
Coupled device
Phototransistor
IR-diode
CNY17
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 08-Jan-14
3
Document Number: 83606
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
OUTPUT
Collector emitter capacitance V
CE
= 5 V, f = 1 MHz C
CE
5.2 pF
Collector base capacitance V
CE
= 5 V, f = 1 MHz C
CB
6.5 pF
Emitter base capacitance V
CE
= 5 V, f = 1 MHz C
EB
7.5 pF
Thermal resistance R
th
500 K/W
COUPLER
Collector emitter, saturation voltage V
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.6 pF
Collector emitter, leakage current V
CE
= 10 V
CNY17-1 I
CEO
250nA
CNY17-2 I
CEO
250nA
CNY17-3 I
CEO
5 100 nA
CNY17-4 I
CEO
5 100 nA
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA
CNY17-1 CTR 40 80 %
CNY17-2 CTR 63 125 %
CNY17-3 CTR 100 200 %
CNY17-4 CTR 160 320 %
V
CE
= 5 V, I
F
= 1 mA
CNY17-1 CTR 13 30 %
CNY17-2 CTR 22 45 %
CNY17-3 CTR 34 70 %
CNY17-4 CTR 56 90 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
LINEAR OPERATION (without saturation)
Turn-on time I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω t
on
3μs
Rise time I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω t
r
2μs
Turn-off time I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω t
off
2.3 μs
Fall time I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω t
f
2μs
Cut-off frequency I
F
= 10 mA, V
CC
= 5 V, R
L
= 75 Ω f
CO
110 kHz
SWITCHING OPERATION (with saturation)
Turn-on time
I
F
= 20 mA CNY17-1 t
on
3μs
I
F
= 10 mA
CNY17-2 t
on
4.2 μs
CNY17-3 t
on
4.2 μs
I
F
= 5 mA CNY17-4 t
on
6μs
Rise time
I
F
= 20 mA CNY17-1 t
r
2μs
I
F
= 10 mA
CNY17-2 t
r
3μs
CNY17-3 t
r
3μs
I
F
= 5 mA CNY17-4 t
r
4.6 μs
Turn-off time
I
F
= 20 mA CNY17-1 t
off
18 μs
I
F
= 10 mA
CNY17-2 t
off
23 μs
CNY17-3 t
off
23 μs
I
F
= 5 mA CNY17-4 t
off
25 μs
Fall time
I
F
= 20 mA CNY17-1 t
f
11 μs
I
F
= 10 mA
CNY17-2 t
f
14 μs
CNY17-3 t
f
14 μs
I
F
= 5 mA CNY17-4 t
f
15 μs
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
P1-P3P4-P6P7-P9

CNY17-1X001

Mfr. #:
Buy CNY17-1X001
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR 40-80%
Lifecycle:
New from this manufacturer.
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