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NSR20204NXT5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 2
1 Publication Order Number:
NSR20204/D
NSR20204NXT5G
2 A, 20 V, Schottky Barrier
Diode
These Schottky barrier diodes are optimized for low forward
voltage drop and low leakage current and are offered in a Chip Scale
Package (CSP) to reduce board space. The low thermal resistance
enables designers to meet the challenging task of achieving higher
efficiency and meeting reduced space requirements.
Features
• Low Forward Voltage Drop − 550 mV (Typ.) @ I
F
= 2.0 A
• Low Reverse Current − 150 mA (Typ.) @ V
R
= 20 V
• 2.0 A of Continuous Forward Current
• ESD Rating − Human Body Model: Class 3B
ESD Rating − Machine Model: Class C
• High Switching Speed
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• LCD and Keypad Backlighting
• Camera Photo Flash
• Buck and Boost dc−dc Converters
• Reverse Voltage and Current Protection
• Clamping & Protection
MAXIMUM RATINGS
Rating Symbol Value Unit
Reverse Voltage V
R
20 V
Forward Current (DC) I
F
2.0 A
Forward Surge Current
(60 Hz @ 1 cycle)
I
FSM
13
A
Repetitive Peak Forward Current
(Pulse Wave = 1 sec, Duty Cycle = 66%)
I
FRM
2.5 A
ESD Rating: Human Body Model
Machine Model
ESD > 8
> 400
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
PIN CONNECTIONS
1
CATHODE
2
ANODE
www.onsemi.com
Device Package Shipping†
ORDERING INFORMATION
NSR20204NXT5G DSN2
(Pb−Free)
5000 / Tape & Ree
l
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
DSN2
(0402)
CASE 152AE
MARKING
DIAGRAM
4J = Specific Device Code
Y = Year Code
1
2
PIN 1
4JM
NSR20204NXT5G
www.onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic Symbol Min Typ Max Unit
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
260
480
°C/W
mW
Thermal Resistance
Junction−to−Ambient (Note 2)
Total Power Dissipation @ T
A
= 25°C
R
q
JA
P
D
100
1.25
°C/W
W
Storage Temperature Range T
stg
−40 to +125 °C
Junction Temperature T
J
+150 °C
1. Mounted onto a 4 in square FR−4 board 50 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
2. Mounted onto a 4 in square FR−4 board 650 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state.
Figure 1. Thermal Response (Note 1)
0.00000001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
1
10
100
1000
R(t) (C/W)
PULSE TIME (sec)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
0.00001
0.1
0.01
0.0000010.0000001
Figure 2. Thermal Response (Note 2)
0.00000001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
1
10
100
R(t) (C/W)
PULSE TIME (sec)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
0.00001
0.1
0.01
0.0000010.0000001
NSR20204NXT5G
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Leakage
(V
R
= 10 V)
(V
R
= 20 V)
I
R
−
−
5.0
15
20
80
mA
Forward Voltage
(I
F
= 10 mA)
(I
F
= 100 mA)
(I
F
= 500 mA)
(I
F
= 1.0 A)
(I
F
= 2.0 A)
V
F
−
−
−
−
−
260
330
400
450
540
280
340
420
480
600
mV
Total Capacitance (V
R
= 2.0 V, f = 1.0 MHz) C
T
− 75 − pF
Reverse Recovery Time (I
F
= I
R
= 10 mA, I
R(REC)
= 1.0 mA, Figure 3) t
rr
− 28 − ns
Peak Forward Recovery Voltage (I
F
= 100 mA, t
r
= 20 ns, Figure 4) V
FRM
− 486 − mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Figure 3. Recovery Time Equivalent Test Circuit
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 4. Peak Forward Recover Voltage Definition
t
r
Time
V
F
V
FRM
I
F
Time
V
F
P1-P3P4-P5

NSR20204NXT5G

Mfr. #:
Buy NSR20204NXT5G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 2.0A 20V DSN2 0402SC
Lifecycle:
New from this manufacturer.
Delivery:
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