TLP3220
2014-09-01 2
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristic Symbol Rating Unit
LED
Forward current I
F
50 mA
Forward current derating (Ta≥25°C) ΔI
F
/°C −0.5 mA/°C
Reverse voltage V
R
5 V
Junction temperature T
j
125 °C
Detector
Off-State output terminal voltage V
OFF
100 V
On-State current I
ON
80 mA
On-State current derating (Ta≥25°C) ΔI
ON
/°C −0.8 mA/°C
Junction temperature T
j
125 °C
Storage temperature range T
stg
−40~125 °C
Operating temperature range T
opr
−20~85 °C
Lead soldering temperature (10 s) T
sol
260 °C
Isolation voltage (AC, 1 minute, R.H.≤ 60%) (Note 1) BV
S
1500 Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 1): Device considered a two-terminal device: Pins 1 and 2 shorted together, and pins 3 and 4 shorted together.
Precautions
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage V
DD
⎯ ⎯ 80 V
Forward current I
F
10 ⎯ 30 mA
Operating temperature T
opr
25 ⎯ 60 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics
(Ta
=
25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
LED
Forward voltage V
F
I
F
= 10 mA 1.0 1.15 1.3 V
Reverse current I
R
V
R
= 5 V ⎯ ⎯ 10 μA
Capacitance C
T
V = 0, f = 1 MHz ⎯ 15 ⎯ pF
Detector
Off-state current I
OFF
V
OFF
= 80 V ⎯ ⎯ 200 pA
V
OFF
= 100 V 1 μA
Capacitance C
OFF
V = 0, f = 100 MHz, t < 1 s ⎯ 6 8 pF
