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DMP2033UVT-13

P1-P3P4-P5
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
1 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
ADVANCED INFORMATION
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(ON) max
I
D
T
A
= +25°C
-20V
65m @V
GS
= -4.5V -4.2A
100m @V
GS
= -2.5V -3.4A
Description
This MOSFET has been designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
• Backlighting
• Power Management Functions
• DC-DC Converters
• Motor Control
Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
• Case: TSOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – MatteTin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0013 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMP2033UVT-7 TSOT26 3000/Tape & Reel
DMP2033UVT -13 TSOT26 10000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2011 2012 2013 2014 2015 2016 2017
Code Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Internal Schematic
TSOT26
Top View
Top View
Pin-Out
1
2
3
6
5
4
DD
DD
GS
20X = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
= Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Chengdu A/T Site
Shanghai A/T Site
e3
Y
YM
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
2 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
ADVANCED INFORMATION
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
-20 V
Gate-Source Voltage
V
GSS
±8 V
Continuous Drain Current (Note 6)
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
-4.2
-3.4
A
Pulsed Drain Current (Note 6)
I
DM
-10 A
Thermal Characteristics
Characteristic Symbol Value Units
Total Power Dissipation (Note 5)
P
D
1.2 W
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
R
θ
JA
100 °C/W
Total Power Dissipation (Note 6)
P
D
1.7 W
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
R
θ
JA
74 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to 150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
-20
⎯ ⎯
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current T
J
= +25°C I
DSS
⎯ ⎯
-1.0 µA
V
DS
= -20V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100 nA
V
GS
= ±8V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS(th)
-0.5 — -0.9 V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS(ON)
⎯
45 65
m
V
GS
= -4.5V, I
D
= -4.2A
57 100
V
GS
= -2.5V, I
D
= -3.4A
80 200
V
GS
= -1.8V, I
D
= -2A
Forward Transfer Admittance
|Y
fs
| ⎯
9
⎯
S
V
DS
= -5V, I
D
= -4A
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
C
iss
⎯
845
⎯
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
72
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
63
⎯
pF
SWITCHING CHARACTERISTICS (Note 8)
Total Gate Charge
Q
g
⎯
10.4
⎯
nC
V
GS
= -4.5V, V
DS
= -4V,
I
D
= -3.5A
Gate-Source Charge
Q
gs
⎯
1.5
⎯
nC
Gate-Drain Charge
Q
gd
⎯
1.9
⎯
nC
Turn-On Delay Time
t
D(on)
⎯
6.5
⎯
ns
V
DS
= -4V, V
GS
= -4.5V,
R
G
= 6Ω, I
D
= -1A
Turn-On Rise Time
t
r
⎯
13.4
⎯
ns
Turn-Off Delay Time
t
D(off)
⎯
51.5
⎯
ns
Turn-Off Fall Time
t
f
⎯
21.8
⎯
ns
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2033UVT
Document number: DS36617 Rev. 2 - 2
3 of 5
www.diodes.com
March 2014
© Diodes Incorporated
DMP2033UVT
ADVANCED INFORMATION
-V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
-I , D
R
AIN
C
U
R
R
EN
T
(A)
D
20
012345
18
16
14
12
10
8
6
4
2
0
V= -3V
GS
V= -8V
GS
V = -4.5V
GS
V = -2.5V
GS
V= -2V
GS
V = -1.8V
GS
V= -1.5V
GS
V = -1.2V
GS
-V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
-I , D
R
AI
N
C
U
R
R
E
N
T
(A)
D
0
2
4
6
8
10
12
14
16
18
20
0 0.5 1 1.5 2 2.5 3
T = 150C
A
°
T = 125C
A
°
T = 85C
A
°
T = 25C
A
°
T = -55C
A
°
V= -5.0V
DS
-I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0.12
0 5 10 15 20
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.00
V = -2.5V
GS
V = -4.5V
GS
-I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
R
, D
R
AIN-S
O
U
R
CE
O
N-
R
ESISTANCE ( )
DS(ON)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
012345678910
T = -55C
A
°
T = 25C
A
°
T = 85C
A
°
T = 125 C
A
°
T = 150 C
A
°
V= -4.5V
GS
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
ON-RESISTANCE (NORMALIZED)
DS(ON)
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V = -2.5V
I = -5A
GS
D
V = -4.5V
I = -10A
GS
D
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
R
, D
R
AIN-S
O
U
R
C
E
O
N-
R
ESIS
T
AN
C
E ( )
DS(on)
Ω
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
V= -4.5V
I= A
GS
D
-10
P1-P3P4-P5

DMP2033UVT-13

Mfr. #:
Buy DMP2033UVT-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC
Lifecycle:
New from this manufacturer.
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