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4 - 4
IXYS reserves the right to change limits, test conditions and dimensions.
VKI 50-06P1
237
B3
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0204060
0
2
4
6
8
0
20
40
60
80
0 204060
0,0
0,5
1,0
1,5
2,0
0
100
200
300
400
0,00001 0,0001 0,001 0,01 0,1 1 10
0,0001
0,001
0,01
0,1
1
10
0 1020304050607080
0,0
0,5
1,0
1,5
2,0
0
100
200
300
400
0 1020304050607080
0
1
2
3
4
20
40
60
80
single pulse
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
VDI...50-06P1
V
CE
= 300V
V
GE
= ±15V
I
C
= 30A
T
VJ
= 125°C
0 100 200 300 400 500 600 700
0
20
40
60
80
R
G
= 33 Ω
T
VJ
= 125°C
V
CE
= 300V
V
GE
= ±15V
R
G
= 33Ω
T
VJ
= 125°C
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
V
A
mJ
ns
ns
mJ
25T60
25T60
25T60
25T60
25T60
V
CE
= 300 V
V
GE
= ±15 V
I
C
= 30 A
T
VJ
= 125°C
diode
