IRAM336-025SB
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Integrated Bootstrap Functionality
The internal Driver IC in the IRAM336-025SB embeds an integrated bootstrap FET that allows an alternative
drive of the bootstrap supply for a wide range of applications.
There is one bootstrap FET for each channel and it is connected between each of the floating supply (VB1,
VB2, VB3) and Vcc as shown in Figure 3.
Figure 3. Simplified BootFet Connection
The Bootstrap FET of each channel follows the state of the respective low side output stage (i.e., bootFet is
ON when LO is high, it is OFF when LO is low), unless the V
B
voltage is higher than approximately 1.1(V
cc
).
In that case the bootstrap FET stays off until the V
s
voltage returns below that threshold (see Fig. 4).
Figure 4. State Diagram
Bootstrap FET is suitable for most PWM modulation schemes and can be used either in parallel with the
external bootstrap network (diode+resistor) or as a replacement of it. The use of the integrated bootstrap
as a replacement of the external bootstrap network may have some limitations in the following situations:
- When used in non-complementary PWM schemes (typically 6-step modulations).
- At a very high PWM duty cycle due to the bootstrap FET equivalent resistance (R
BS
, see page 5).
In these cases, better performances can be achieved by using an external bootstrap network.