IRAM336-025SB
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Typical Application Circuit – IRAM336-025SB
IRAM336-025SB
Date Code Lot #
1
19
Application Circuit Recommendation
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce
ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the module pins
will further improve performance.
2. In order to provide good decoupling between VCC-VSS and Vb-Vs terminals, the capacitors shown
connected between these terminals should be located very close to the module pins. Additional high
frequency capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be made
based on IR design tip DN 98-2a or application note AN-1044 or Figure 12.
4. WARNING! Please note that after approx. 8ms the FAULT is automatically reset (see Dynamic
Characteristics Table on page 5). PWM generator must be disabled within automatic reset time (T
FLT-CLR
) to
guarantee shutdown of the system, over-current condition must be cleared before resuming operation.
5. The case of the module is connected to the negative DC Bus and is NOT Isolated. It is
recommended to provide isolation material between case and heat sink to avoid electrical
shock.
IRAM336-025SB
8 www.irf.com
Module Pin-Out Description
Pin Name Description
1 TH Temperature Feedback
2
V
-
Negative Bus Input Voltage
3
V
+
Positive Bus Input Voltage
4
W,V
S3
Output 3 - High Side Floating Supply Offset Voltage
5
V
B3
High Side Floating Supply Voltage 3
6
V,V
S2
Output 2 - High Side Floating Supply Offset Voltage
7
V
B2
High Side Floating Supply voltage 2
8
U,V
S1
Output 1 - High Side Floating Supply Offset Voltage
9
V
B1
High Side Floating Supply voltage 1
10
I
TRIP
Current Feedback & Shut-down Function
11
H
IN1
Logic Input High Side Gate Driver - Phase 1
12
H
IN2
Logic Input High Side Gate Driver - Phase 2
13
H
IN3
Logic Input High Side Gate Driver - Phase 3
14
L
IN1
Logic Input Low Side Gate Driver - Phase 1
15
L
IN2
Logic Input Low Side Gate Driver - Phase 2
16
L
IN3
Logic Input Low Side Gate Driver - Phase 3
17 FAULT/EN Fault Indicator & Enable Function
18
V
DD
+15V Main Supply
19
V
SS
Negative Main Supply
1
19
IRAM336-025SB
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Integrated Bootstrap Functionality
The internal Driver IC in the IRAM336-025SB embeds an integrated bootstrap FET that allows an alternative
drive of the bootstrap supply for a wide range of applications.
There is one bootstrap FET for each channel and it is connected between each of the floating supply (VB1,
VB2, VB3) and Vcc as shown in Figure 3.
Figure 3. Simplified BootFet Connection
The Bootstrap FET of each channel follows the state of the respective low side output stage (i.e., bootFet is
ON when LO is high, it is OFF when LO is low), unless the V
B
voltage is higher than approximately 1.1(V
cc
).
In that case the bootstrap FET stays off until the V
s
voltage returns below that threshold (see Fig. 4).
Figure 4. State Diagram
Bootstrap FET is suitable for most PWM modulation schemes and can be used either in parallel with the
external bootstrap network (diode+resistor) or as a replacement of it. The use of the integrated bootstrap
as a replacement of the external bootstrap network may have some limitations in the following situations:
- When used in non-complementary PWM schemes (typically 6-step modulations).
- At a very high PWM duty cycle due to the bootstrap FET equivalent resistance (R
BS
, see page 5).
In these cases, better performances can be achieved by using an external bootstrap network.

IRAM336-025SB

Mfr. #:
Manufacturer:
Infineon / IR
Description:
Motor / Motion / Ignition Controllers & Drivers 2A 500V ING PWR MOD 3-PHASE HYBRID IC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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