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PIP3103-T,115

P1-P3P4-P6P7-P9P10-P11
Philips Semiconductors Product specification
PowerMOS transistor PIP3103-T
Logic level TOPFET
OVERLOAD PROTECTION CHARACTERISTICS
TOPFET switches off to protect itself when one of the overload thresholds is exceeded.
It remains latched off until reset by the input.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Overload protection -40˚C ≤ T
j
≤ 150˚C
I
D
Drain current limiting V
IS
= 5 V 0.8 1.3 1.7 A
V
IS
= 4.5 V 0.7 - - A
V
IS
= 4 V to 5.5 V 0.6 - 1.8 A
Short circuit load protection V
IS
= 5 V
P
D(TO)
Overload power threshold for protection to operate - 17 - W
T
DSC
Characteristic time which determines trip time
1
- 1.6 - ms
Overtemperature protection from I
D
≥ 280 mA or V
DS
≥ 100 mV
T
j(TO)
Threshold junction temperature V
IS
= 4 V to 5.5 V 150 165 - ˚C
SWITCHING CHARACTERISTICS
T
a
= 25˚C; resistive load R
L
= 50 Ω; adjust V
DD
to obtain I
D
= 250 mA; refer to test circuit and waveforms
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
t
d on
Turn-on delay time V
IS
: 0 V ⇒ 5 V - 5 12 µs
t
r
Rise time - 11 30 µs
t
d off
Turn-off delay time V
IS
: 5 V ⇒ 0 V - 25 65 µs
t
f
Fall time - 14 35 µs
REVERSE DIODE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
S
Continuous forward current T
mb
≤ 25 ˚C; V
IS
= 0 V - 2 A
REVERSE DIODE CHARACTERISTICS
Limits are for -40˚C ≤ T
mb
≤ 150˚C; typicals are for T
mb
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
SDO
Forward voltage I
S
= 2 A; V
IS
= 0 V; t
p
= 300 µs - 0.83 1.1 V
t
rr
Reverse recovery time not applicable
2
----
1 Trip time t
d sc
varies with overload dissipation P
D
according to the formula t
d sc
≈ T
DSC
/ [ P
D
/ P
D(TO)
- 1 ].
2 The reverse diode of this type is not intended for applications requiring fast reverse recovery.
June 2001 4 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor PIP3103-T
Logic level TOPFET
Fig.2. Normalised limiting power dissipation.
P
D
% = 100⋅P
D
/P
D
(25˚C) = f(T
mb
)
Fig.3. Continuous drain current.
I
D
= f(T
amb
); condition: V
IS
= 5 V
Fig.4. Typical on-state characteristics, T
j
= 25˚C.
I
D
= f(V
DS
); parameter V
IS
; t
p
= 300 µs
Fig.5. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)
25˚C = f(T
j
); I
D
= 100 mA; V
IS
= 4.4 V
Fig.6. Typical on-state resistance, T
j
= 25˚C.
R
DS(ON)
= f(V
IS
); conditions: I
D
= 100 mA, t
p
= 300 µs
Fig.7. Typical transfer characteristics, T
j
= 25˚C.
I
D
= f(V
IS
); conditions: V
DS
= 10 V, t
p
= 300 µs
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0 25 50 75 100 125 150
Mounting Base temperature, Tmb (C)
0
0.5
1
1.5
2
-50
050
100 150
Normalised RDS(ON) = f(Tj)a
Tj / C
0
0
0.5
1.0
1.5
2.0
20 40 60 80 100 120 140
ID / A
Tamb / ˚ C
CURRENT LIMITING OCCURS
WITHIN SHADED REGION
TYP.
012345678
0
50
100
150
200
250
300
350
RDS(ON) / mOhm
VIS / V
TYP.
MAX.
0
20
0
0.5
1
1.5
2
ID / A
VDS / V
4
8
12 16 28 32
24
VIS / V =
6
7
4
5
01234567
0
0.5
1
1.5
2
VIS / V
ID / A
June 2001 5 Rev 1.000
Philips Semiconductors Product specification
PowerMOS transistor PIP3103-T
Logic level TOPFET
Fig.8. Typical overtemperature protection threshold.
T
j(TO)
= f(V
IS
)
Fig.9. Typical DC input characteristics, T
j
= 25˚C.
I
IS
& I
ISL
= f(V
IS
); normal operation & protection latched
Fig.10. Typical DC input currents.
I
IS
& I
ISL
= f(T
j
); parameter V
IS
; normal & latched
Fig.11. Input threshold voltage.
V
IS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= 5 V
Fig.12. Typical input clamping characteristic.
I
I
= f(V
IS
); normal operation, T
j
= 25˚C.
Fig.13. Typical overload protection response time.
1 / t
dsc
= f(P
D
); V
IS
≥ 4 V, T
j
≤ 125˚C.
2345678
160
165
170
175
180
185
190
195
200
Tj(TO) / ˚C
VIS / V
DATA BELOW 4V IS FOR
INFORMATION ONLY.
ALL SPEC. VALUES ARE
AT 4V AND ABOVE.
FOR NORMAL OPERATION
-50 0 50 100 150
0
1
2
3
4
VIS(TO) / V
Tj / ˚C
TYP.
MIN.
MAX.
012345678
0
0.5
1
Vis / V
Ii / mA
Iisl
Iis
0246810
0
1
2
3
4
5
6
7
8
9
10
II / mA
VIS / V
-50 0 50 100 150
0
100
200
300
400
500
IIS & IISL / uA
Tj / ˚C
= IIS
= IISL
5V
5V
4V
3V
VIS / V =
0102030 50
0
200
400
600
800
1000
1200
1400
1600
1s / tdsc
Pd / W
51525354045
June 2001 6 Rev 1.000
P1-P3P4-P6P7-P9P10-P11

PIP3103-T,115

Mfr. #:
Buy PIP3103-T,115
Manufacturer:
NXP Semiconductors
Description:
TOPFET LOGIC LVL 50V SOT223
Lifecycle:
New from this manufacturer.
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