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BYT230PIV-1000

P1-P3P4-P5
BYT230PIV-1000
BYT231PIV-1000
October 1999 - Ed: 3B
FAST RECOVERY RECTIFIER DIODES
®
Dual high voltage rectifier devices are suited for
free-wheeling function in converters and motor
control circuits.
Packaged in ISOTOP, they are intended for use in
Switch Mode Power Supplies.
DESCRIPTION
VERY LOW REVERSE RECOVERY TIME
VERY LOW SWITCHING LOSSES
LOW NOISE TURN-OFF SWITCHING
INSULATED PACKAGE: ISOTOP
Insulation voltage: 2500 V
RMS
Capacitance = 45 pF
Inductance < 5 nH
FEATURES AND BENEFITS
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage
1000 V
I
FRM
Repetitive peak forward current tp=5 µs F=1kHz
700 A
I
F(RMS)
RMS forward current
50 A
I
F(AV)
Average forward current Tc = 55°C
δ = 0.5
30 A
I
FSM
Surge non repetitive forward current tp = 10 ms Sinusoidal
200 A
T
stg
Storage temperature range
- 40 to + 150 °C
Tj
Maximum operating junction temperature
150 °C
ABSOLUTE RATINGS (limiting values, per diode)
I
F(AV)
2 x 30 A
V
RRM
1000 V
V
F
(max) 1.8 V
trr (max) 80 ns
MAIN PRODUCT CHARACTERISTICS
ISOTOP
TM
(Plastic)
K2 A2
A1K1
BYT231PIV-1000
A2 K1
A1K2
BYT230PIV-1000
TM:
ISOTOP is a registered trademark of STMicroelectronics.
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Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Obsolete Product(s) - Obsolete Product(s)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
F
*
Forward voltage drop Tj = 25°CI
F
= 30 A
1.9 V
Tj = 100°C
1.8
I
R
**
Reverse leakage
current
Tj = 25°CV
R
= V
RRM
100 µA
Tj = 100°C
5mA
Pulse test : * tp = 380
µ
s,
δ
< 2%
** tp = 5 ms,
δ
< 2%
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol Parameter Value Unit
R
th(j-c)
Junction to case Per diode
Total
1.5
0.8
°C/W
R
th(c)
Coupling
0.1
When the diodes 1 and 2 are used simultaneously :
∆ Tj(diode 1) = P(diode) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
THERMAL RESISTANCES
To evaluate the conduction losses use the following equation:
P = 1.47 x I
F(AV)
+ 0.010 I
F
2
(RMS)
Symbol Test Conditions Min. Typ. Max. Unit
t
rr
Tj = 25°C I
F
= 1A V
R
= 30V dI
F
/dt = - 15A/µs
165 ns
I
F
= 0.5A I
R
= 1A I
rr
= 0.25A
80
RECOVERY CHARACTERISTICS (per diode)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
IRM
Maximum reverse
recovery time
dI
F
/dt = - 120 A/µsV
CC
= 200 V
I
F
= 30 A
L
p
≤ 0.05 µH
Tj = 100°C
(see fig. 11)
200 ns
dI
F
/dt = - 240 A/µs
120
I
RM
Maximum reverse
recovery current
dI
F
/dt = - 120 A/µs
19.5 A
dI
F
/dt = - 240 A/µs
22
C =
V
RP
V
CC
Turn-off overvoltage
coefficient
Tj = 100°C
V
CC
= 200V I
F
= I
F(AV)
dI
F
/dt = - 30A/µs L
p
= 5µH
(see fig. 12)
4.5 /
TURN-OFF SWITCHING CHARACTERISTICS (per diode)
BYT230PIV-1000 / BYT231PIV-1000
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Fig. 2: Peak current versus form factor.
Fig. 3: Non repetitive peak surge current versus
overload duration.
Fig. 4: Relative variation of thermal impedance
junction to case versus pulse duration.
0 5 10 15 20 25 30 35
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
=0.05
=0.1
=0.2
=0.5
T
=tp/T
tp
I
F(av)(A)
P
F(av)(W)
=1
Fig. 1: Low frequency power losses versus
average current.
Fig. 6: Recovery charge versus di
F
/dt.
Fig. 5: Voltage drop versus forward current.
BYT230PIV-1000 / BYT231PIV-1000
3/5
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P5

BYT230PIV-1000

Mfr. #:
Buy BYT230PIV-1000
Manufacturer:
STMicroelectronics
Description:
Rectifiers 2X30 Amp 1000 Volt
Lifecycle:
New from this manufacturer.
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