KSA1406CSTU Datasheet KSA1406CSTU | P1-P3

KSA1406

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings

T

C

=25°C unless otherwise noted

Electrical Characteristics

T

C

=25°C unless otherwise noted

* h

FE

Classification

Symbol Parameter Ratings Units

V

CBO

Collector-Base Voltage - 200 V

V

CEO

Collector-Emitter Voltage - 200 V

V

EBO

Emitter-Base Voltage - 4 V

I

C

Collector Current (DC) - 100 mA

I

CP

Collector Current (Pulse) - 200 mA

P

C

Collector Dissipation (T

a

=25°C) 1.2 W

P

C

Collector Dissipation (T

C

=25°C) 7 W

T

J

Junction Temperature 150 °C

T

STG

Storage Temperature - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Typ. Max. Units

BV

CBO

Collector-Base Breakdown Voltage I

C

= - 10µA, I

B

= 0 - 200 V

BV

CEO

Collector-Emitter Breakdown Voltage I

C

= - 1mA, R

BE

=∞ - 200 V

BV

EBO

Emitter-Base Breakdown Voltage I

E

= - 100µA, I

C

= 0 - 4 V

I

CBO

Collector Cut-off Current V

CB

= - 150V, I

C

= 0 - 0.1 µA

I

EBO

Emitter Cut-off Current V

BE

= - 2V, I

E

= 0 - 0.1 µA

h

FE1

h

FE2

DC Current Gain V

CE

= - 10V, I

C

= - 10mA

V

CE

= - 10V, I

C

= - 60mA

40

20

120

V

CE

(Sat) Collector-Emitter Saturation Voltage I

C

= - 30mA, I

C

= - 3mA - 0.8 V

V

BE

(Sat) Base-Emitter Saturation Voltage I

C

= - 30mA, I

C

= - 3mA - 1.8 V

f

T

Current Gain Bandwidth Product V

CE

= - 30V, I

C

= - 30mA 400 MHz

C

ob

Output Capacitance V

CB

= - 30V, f = 1MHz 2.3 pF

C

re

Reverse Transfer Capacitance V

CB

= - 30V, f = 1MHz 1.7 pF

Classification C D

h

FE1

40 ~ 80 60 ~ 120

KSA1406

CRT Display, Video Output

• High Current Gain Bandwidth Product : f

T

= 400MHz (Typ.)

• High Collector-Base Breakdown Voltage : V

CBO

= -200V

• Low Reverse Transfer Capacitance : C

re

=1.7pF (Typ.)

1

TO-126

1. Emitter 2.Collector 3.Base

KSA1406

Rev. A, February 2000

Typical Characteristics

Figure 1. Static Characteristic Figure 2. DC current Gain

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage

Figure 5. Collector Output Capacitance Figure 6. Reverse Capacitance

-0 -4 -8 -12 -16 -20

-0

-10

-20

-30

-40

-50

I

B

= -500uA

I

B

= -450uA

I

B

= -400uA

I

B

= -150uA

I

B

= -250uA

I

B

= -350uA

I

B

= -100uA

I

B

= -200uA

I

B

= -300uA

I

B

= -50uA

I

B

= 0uA

I

C

[A], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

-0.1 -1 -10 -100

1

10

100

1k

V

CE

= -10V

h

FE

, DC CURRENT GAIN

I

C

[mA], COLLECTOR CURRENT

-0.1 -1 -10 -100

-0.01

-0.1

-1

-10

Ic = 10 I

B

V

CE

(sat)[V], SATURATION VOLTAGE

I

C

[mA], COLLECTOR CURRENT

-0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2

-0

-20

-40

-60

-80

-100

-120

V

CE

= -10V

I

C

[mA], COLLECTOR CURRENT

V

BE

[V], BASE-EMITTER VOLTAGE

-0.1 -1 -10 -100

0.1

1

10

100

I

E

=0

f=1MHz

C

ob

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

-0.1 -1 -10 -100

0.1

1

10

100

f=1MHz

C

re

[pF], CAPACITANCE

V

CB

[V], COLLECTOR-BASE VOLTAGE

KSA1406

Rev. A, February 2000

Typical Characteristics

(Continued)

Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area

Figure 9. Power Derating

-1 -10 -100

10

100

1000

V

CE

= -30V

f

T

[MHz], CURRENT GAIN BANDWIDTH PRODUCT

I

C

[mA], COLLECTOR CURRENT

110100

1

10

100

1000

T

C

=25

℃

I

C

(DC) MAX.

V

CEO

Max

1ms

10ms

I

C

(Pulse) MAX.

I

C

[mA], COLLECTOR CURRENT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

0

2

4

6

8

10

T

a

T

c

P

C

[W], POWER DISSIPATION

T[

o

C], TEMPERATURE

KSA1406CSTU

KSA1406CSTU

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