SQM120N10-09_GE3 Datasheet SQM120N10-09_GE3 | P1-P3

SQM120N10-09

www.vishay.com

Vishay Siliconix

S15-1875-Rev. C, 10-Aug-15

1

Document Number: 71515

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Automotive N-Channel 100 V (D-S) 175 °C MOSFET

FEATURES

• TrenchFET

®

power MOSFET

• Package with low thermal resistance

• AEC-Q101 qualified

d

• 100 % R

g

and UIS tested

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

Notes

a. Package limited.

b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

c. When mounted on 1" square PCB (FR4 material).

d. Parametric verification ongoing.

PRODUCT SUMMARY

V

DS

(V) 100

R

DS(on)

(Ω) at V

GS

= 10 V 0.0095

I

D

(A) 120

Configuration Single

Package TO-263

TO-263

Top View

G

D

S

G

D

S

D

G

SN-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage V

DS

100

V

Gate-Source Voltage V

GS

± 20

Continuous Drain Current

T

C

= 25 °C

a

I

D

120

A

T

C

= 125 °C 73

Continuous Source Current (Diode Conduction)

a

I

S

120

Pulsed Drain Current

b

I

DM

480

Single Pulse Avalanche Current

L = 0.1 mH

I

AS

73

Single Pulse Avalanche Energy E

AS

266 mJ

Maximum Power Dissipation

b

T

C

= 25 °C

P

D

375

W

T

C

= 125 °C 125

Operating Junction and Storage Temperature Range T

J

, T

stg

-55 to +175 °C

THERMAL RESISTANCE RATINGS

PARAMETER SYMBOL LIMIT UNIT

Junction-to-Ambient PCB Mount

c

R

thJA

40

°C/W

Junction-to-Case (Drain) R

thJC

0.4

SQM120N10-09

www.vishay.com

Vishay Siliconix

S15-1875-Rev. C, 10-Aug-15

2

Document Number: 71515

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Notes

a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS (T

C

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Static

Drain-Source Breakdown Voltage V

DS

V

GS

= 0, I

D

= 250 μA 100 - -

V

Gate-Source Threshold Voltage V

GS(th)

V

DS

= V

GS

, I

D

= 250 μA 2.5 3.0 3.5

Gate-Source Leakage I

GSS

V

DS

= 0 V, V

GS

= ± 20 V - - ± 100 nA

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V V

DS

= 100 V - - 1

μA V

GS

= 0 V V

DS

= 100 V, T

J

= 125 °C - - 50

V

GS

= 0 V V

DS

= 100 V, T

J

= 175 °C - - 150

On-State Drain Current

a

I

D(on)

V

GS

= 10 V V

DS

≥ 5 V 120 - - A

Drain-Source On-State Resistance

a

R

DS(on)

V

GS

= 10 V I

D

= 30 A - 0.0079 0.0095

ΩV

GS

= 10 V I

D

= 30 A, T

J

= 125 °C - - 0.0190

V

GS

= 10 V I

D

= 30 A, T

J

= 175 °C - - 0.0250

Forward Transconductance

b

g

fs

V

DS

= 15 V, I

D

= 30 A - 99 - S

Dynamic

b

Input Capacitance C

iss

V

GS

= 0 V V

DS

= 25 V, f = 1 MHz

- 6915 8645

pF Output Capacitance C

oss

- 635 795

Reverse Transfer Capacitance C

rss

- 280 350

Total Gate Charge

c

Q

g

V

GS

= 10 V V

DS

= 50 V, I

D

= 85 A

- 120 180

nC Gate-Source Charge

c

Q

gs

-30-

Gate-Drain Charge

c

Q

gd

-28.5-

Gate Resistance R

g

f = 1 MHz 0.25 0.7 2.3 Ω

Turn-On Delay Time

c

t

d(on)

V

DD

= 50 V, R

L

= 0.6 Ω

I

D

≅ 85 A, V

GEN

= 10 V, R

g

= 2.5 Ω

-2132

ns

Rise Time

c

t

r

-2436

Turn-Off Delay Time

c

t

d(off)

-5278

Fall Time

c

t

f

-1624

Source-Drain Diode Ratings and Characteristics

b

Pulsed Current

a

I

SM

--480A

Forward Voltage V

SD

I

F

= 85 A, V

GS

= 0 - 0.9 1.5 V

SQM120N10-09

www.vishay.com

Vishay Siliconix

S15-1875-Rev. C, 10-Aug-15

3

Document Number: 71515

For technical questions, contact: automostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (T

A

= 25 °C, unless otherwise noted)

Output Characteristics

Transconductance

Capacitance

Transfer Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

25

50

75

100

125

150

175

048121620

V

GS

=10Vthru6V

V

GS

=4V

V

GS

=5V

V

DS

- Drain-to-Source Voltage (V)

I

D

- Drain Current (A)

0

40

80

120

160

200

0 1428425670

I

D

- Drain Current (A)

- Transconductance (S)

g

fs

T

C

= 125 °C

T

C

= 25 °C

T

C

= -55 °C

0

2000

4000

6000

8000

10 000

0 20406080100

C

iss

C

rss

C

oss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0

20

40

60

80

100

120

0246810

T

C

= 125 °C

T

C

= 25 °C

T

C

= -55 °C

V

GS

- Gate-to-Source Voltage (V)

I

D

- Drain Current (A)

0

0.004

0.008

0.012

0.016

0.020

0 20406080100120

V

GS

=10V

R

DS(on)

- On-Resistance (Ω)

I

D

- Drain Current (A)

0

2

4

6

8

10

0 20406080100120

I

D

=85A

V

DS

=50V

Q

g

- Total Gate Charge (nC)

V

GS

- Gate-to-Source Voltage (V)

SQM120N10-09_GE3

SQM120N10-09_GE3

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