MII75-12A3 Datasheet MII75-12A3 | P1-P3

MII75-12A3

Phase leg

IGBT (NPT) Module

1

3

2

7

6

4

5

Part number

MII75-12A3

Backside: isolated

C25

CE(sat)

VV2.2

CES

90

1200

=

V= V

I= A

2x

Features / Advantages: Applications: Package:

● NPT IGBT technology

● low saturation voltage

● low switching losses

● switching frequency up to 30 kHz

● square RBSOA, no latch up

● high short circuit capability

● positive temperature coefficient for

easy parallelling

● MOS input, voltage controlled

● ultra fast free wheeling diodes

● AC motor drives

● Solar inverter

● Medical equipment

● Uninterruptible power supply

● Air-conditioning systems

● Welding equipment

● Switched-mode and resonant-mode

power supplies

● Inductive heating, cookers

● Pumps, Fans

Y4

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Base plate: DCB ceramic

● Reduced weight

● Advanced power cycling

● Isolation Voltage: V~

3600

IXYS reserves the right to change limits, conditions and dimensions.

20131206aData according to IEC 60747and per semiconductor unless otherwise specified

MII75-12A3

-di /dt = A/µs

T = °C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collector current

A

90

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions

Unit

60

V

CE(sat)

total power dissipation

370

W

collector emitter leakage current

6.5

V

turn-on delay time

100

ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient gate emitter voltage

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

100

±30

T = °C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current

V = ±20 V

GE

2.7

5.54.5

mA

6

mA

4

200

G(on)

total gate charge

V = V; V = 15 V; I = A

CE

Q

GE C

240

nC

t

E

d(on)

r

d(off)

f

on

off

70

ns

500

ns

70

ns

7.6

mJ

5.6

mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE

C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEmax

1200

short circuit safe operating area

µs

SCSOA

10T = °C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

180

A

R

thJC

thermal resistance junction to case

0.33

K/W

V

RRM

V1200

max. repetitive reverse voltage

T = 25°C

VJ

T = 25°C

forward current

A

100

A

C

60T = °C

C

I

F25

I

F

T = 25°C

forward voltage

V

2.50

V

VJ

1.80T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current

mA

0.65

mA

VJ

1T = 125°C

VJ

I

R R RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

3.5

µC

40

A

200

ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I = A; V = 0 V

F

FGE

E

rec

1

mJ

reverse recovery energy

R

thJC

thermal resistance junction to case

0.66

K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = °C

VJ

50

2

50

22

600

1200

400

600

I

CM

2.2

R

thCH

thermal resistance case to heatsink

0.33

K/W

R

thCH

thermal resistance case to heatsink

0.66 K/W

IGBT

Diode

600 V

V = V

CEmax

1200

80

125

nA

IXYS reserves the right to change limits, conditions and dimensions.

20131206aData according to IEC 60747and per semiconductor unless otherwise specified

MII75-12A3

Ratings

YYYYYYYYYYY

yywwA

Circuit Diagram

2D Matrix

Part No.

Assembly

Line

Date Code

Package

T

op

°C

M

D

Nm2.75

mounting torque

2.25

T

VJ

°C150

virtual junction temperature

-40

Weight g110

Symbol Definition typ. max.min.Conditions

operation temperature

Unit

M

T

Nm5.5

terminal torque

4.5

V V

t = 1 second

V

t = 1 minute

isolation voltage

mm

14.0 10.0

16.0 16.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

300 A

per terminal

125-40

terminal to terminal

Y

4

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MII75-12A3 466735Box 6MII75-12A3Standard

3600

ISOL

T

stg

°C125

storage temperature

-40

3000

threshold voltage

V

mΩ

V

0 max

R

0 max

slope resistance *

1.5

20.1

1.3

10.8

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

IGBT Diode

150 °C

* on die level

IXYS reserves the right to change limits, conditions and dimensions.

20131206aData according to IEC 60747and per semiconductor unless otherwise specified

MII75-12A3

MII75-12A3

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