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BYW172F-TR

P1-P3P4-P4
BYW172D, BYW172F, BYW172G
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 11-Sep-12
1
Document Number: 86096
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Low forward voltage drop
• High pulse current capability
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Fast rectification diode in S.M.P.S
949588
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYW172G BYW172G-TR 2500 per 10" tape and reel 12 500
BYW172G BYW172G-TAP 2500 per ammopack 12 500
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYW172D V
R
= 200 V; I
F(AV)
= 3 A SOD-64
BYW172F V
R
= 300 V; I
F(AV)
= 3 A SOD-64
BYW172G V
R
= 400 V; I
F(AV)
= 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYW172D V
R
= V
RRM
200 V
BYW172F V
R
= V
RRM
300 V
BYW172G V
R
= V
RRM
400 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
100 A
Average forward current I
F(AV)
3A
Non repetitive reverse avalanche energy I
(BR)R
= 1 A E
R
20 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
Lead length l = 10 mm, T
L
= constant R
thJA
25 K/W
On PC board with spacing 25 mm R
thJA
70 K/W
BYW172D, BYW172F, BYW172G
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 11-Sep-12
2
Document Number: 86096
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 3 A V
F
--1.1V
I
F
= 9 A V
F
--1.5V
Reverse current
V
R
= V
RRM
I
R
--1μA
V
R
= V
RRM
, T
j
= 100 °C I
R
- - 20 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- 75 100 ns
0
10
20
30
40
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)949466
ll
T
L
= constant
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0 2.5
V
F
- Forward Voltage (V)
16387
T
j
= 25 °C
T
j
= 175 °C
16388
I
FAV
- Average Forward Current (A)
0 20406080100120140160180
T
amb
- Ambient Temperature (°C)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
R
= V
RRM
half sinewave
R
thJA
= 70 K/W
PCB: d = 25 mm
R
thJA
= 25 K/W
I = 10 mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16389
I
R
- Reverse Current (μA)
V
R
= V
RRM
BYW172D, BYW172F, BYW172G
www.vishay.com
Vishay Semiconductors
Rev. 1.4, 11-Sep-12
3
Document Number: 86096
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
Fig. 7 - Thermal Response
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
20
100
40
120
60
140
80
160
180
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16390
P
R
- Reverse Power Dissipation (mW)
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
V
R
= V
RRM
0
20
40
60
80
100
120
0.1 1 10 100
V
R
- Reverse Voltage (V)
16391
C
D
- Diode Capacitance (pF)
f = 1 MHz
1
10
100
1000
10
-4
10
2
10
1
10
0
10
2
10
1
10
-0
10
-1
10
-2
10
-3
t
p
- Pulse Length (s)I
FRM
- Repetitive Peak
Forward Current (A)
949562
Z
thp
- Thermal Resist. for Pulse Cond. (K/W)
t
p
/T = 0.5
0.2
0.02
0.05
0.01
0.1
V
RRM
= 600 V
R
thJA
= 70 K/W
T
amb
= 25 °C
45 °C
70 °C
100 °C
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
P1-P3P4-P4

BYW172F-TR

Mfr. #:
Buy BYW172F-TR
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 3.0 Amp 300 Volt 100 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
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