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SFH655A-X009T

P1-P3P4-P6P7-P8
SFH655A
www.vishay.com
Vishay Semiconductors
End of Life March-2018
Rev. 1.6, 23-Jul-15
1
Document Number: 83667
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Photodarlington Output
DESCRIPTION
The SFH655A is optically coupled isolators with a gallium
arsenide infrared LED and a silicon photodarlington
detector. Switching can be achieved while maintaining a
high degree of isolation between driving and load circuits.
This optocouplers can be used to replace reed and mercury
relays with advantages of long life, high speed switching and
elimination of magnetic fields.
FEATURES
• High isolation test voltage 5300 V
RMS
• Standard plastic DIP-4 package
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
AGENCY APPROVALS
• UL - file no. E52744 system code H, double protection
• DIN EN 60747-5-2 (VDE 0884), IEC 60747-5-5
• DIN EN 60747-5-5 (VDE 0884) pending
• BSI IEC 60950; IEC 60065
Note
• For additional information on the available options refer to option information
CE
i179060
ORDERING INFORMATION
SFH6##A-####
PART NUMBER PACKAGE OPTION
AGENCY CERTIFIED/PACKAGE CTR (%)
cUL, VDE > 600
DIP-4 SFH655A
SMD-4, option 9 SFH655A-X009
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
RM
6V
Forward continuous current I
F
60 mA
Surge forward current t
p
≤ 10μs I
FSM
2.5 A
Derate linearly from 25 °C 1.33 mW/°C
Power dissipation P
diss
100 mW
OUTPUT
Collector emitter breakdown voltage BV
CEO
55 V
Emitter collector breakdown voltage BV
ECO
6V
Collector (load) current I
C
125 mA
Derate linearly from 25 °C 2mW/°C
Power dissipation P
diss
150 mW
> 0.1 mm
7.62 mm
DIP
Option 9
SFH655A
www.vishay.com
Vishay Semiconductors
End of Life March-2018
Rev. 1.6, 23-Jul-15
2
Document Number: 83667
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP)
Fig. 1 - Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements
COUPLER
Derate linearly from 25 °C 3.33 mW/°C
Total power dissipation P
tot
250 mW
Storage temperature range T
stg
-55 to +150 °C
Operating temperature range T
amb
-55 to +100 °C
Soldering temperature
(1)
max. 10 s, dip soldering distance
to seating plane ≥ 1.5 mm
T
sld
260 °C
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
22375
0
20
40
60
80
100
120
140
160
0 20406080100120
P
diss
(mW)
I
F
(mA)
Ambient Temperature (°C)
Photodarlington
IR-Diode
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
- 1.15 1.5 V
Reverse current V
R
= 6 V I
R
-0.0210μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
-50-pF
OUTPUT
Collector emitter breakdown voltage I
CE
= 100 μA BV
CEO
55 - - V
Emitter collector breakdown voltage I
EC
= 10 μA BV
ECO
6--V
Collector emitter dark current V
CE
= 40 V I
CEO
- 12 400 nA
Collector emitter capacitance V
CE
= 0 V, f = 1 MHz C
CE
- 13.5 - pF
COUPLER
Collector emitter saturation voltage I
F
= 20 mA, I
C
= 5 mA SFH655A V
CEsat
--1V
Coupling capacitance V
I-O
= 0 V, f = 1 MHz C
C
-0.45- pF
SFH655A
www.vishay.com
Vishay Semiconductors
End of Life March-2018
Rev. 1.6, 23-Jul-15
3
Document Number: 83667
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• As per IEC 60747-5-5, § 7.4.3.8.2, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits
Fig. 2 - Derating Diagram Fig. 3 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-2 (VDE 0884); IEC 60747-5-5
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio I
F
= 1 mA, V
CE
= 2 V SFH655A CTR 600 - - %
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Climatic classification According to IEC 68 part 1 55 / 100 / 21
Comparative tracking index CTI 175
Maximum rated withstanding isolation voltage t = 1 min V
ISO
4420 V
RMS
Maximum transient isolation voltage V
IOTM
10 000 V
Maximum repetitive peak isolation voltage V
IORM
890 V
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
≥ 10
9
Ω
Output safety power P
SO
400 mW
Input safety current I
SI
275 mA
Input safety temperature T
SI
175 °C
Creepage distance Standard DIP-4 ≥ 7mm
Clearance distance Standard DIP-4 ≥ 7mm
Insulation thickness DTI ≥ 0.4 mm
Partial discharge test voltage - routine test 100 %, t
test
= 1 s V
pd
1.669 kV
Partial discharge test voltage - lot test (sample test) t
Tr
= 60 s, t
test
= 10 s, (see fig. 2) V
pd
1.424 kV
22376-1
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200
Ambient Temperature (°C)
Photodarlington
P
so
(mW)
I
R
-Diode
I
si
(mA)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
P1-P3P4-P6P7-P8

SFH655A-X009T

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Transistor Output Optocouplers Photodarlington Out Single CTR > 600%
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