OMO ElectronicOMO Electronic
Expand menu
0 Cart

TSM038N03PQ33 RGG

P1-P3P4-P6
TSM038N03PQ33
Taiwan Semiconductor
4 Version: B1610
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Capacitance vs. Drain-Source Voltage
BV
DSS
vs. Junction Temperature
Maximum Safe Operating Area, Junction-to-Case
Source-Drain Diode Forward Current vs. Voltage
Normalized Thermal Transient Impedance, Junction-to-Case
I
S
, Reverse Drain Current (A)
V
SD
, Body Diode Forward Voltage (V)
Normalized Effective Transient
Thermal Impedance, Z
ӨJC
t, Square Wave Pulse Duration (sec)
C, Capacitance (pF)
V
DS
, Drain to Source Voltage (V)
BV
DSS
(Normalized)
Drain-Source Breakdown Voltage
T
J
, Junction Temperature (°C)
V
DS
, Drain to Source Voltage (V)
I
D
, Drain Current (A)
0.1
1
10
100
0.2 0.4 0.6 0.8 1 1.2
25℃
150℃
-55℃
0
500
1000
1500
2000
2500
3000
3500
0 5 10 15 20 25 30
CISS
COSS
CRSS
0.8
0.9
1
1.1
1.2
-75 -50 -25 0 25 50 75 100 125 150
I
D
=1mA
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
SINGLE PULSE
R
ӨJC
=3.2°C/W
Duty=0.5
Duty=0.2
Duty=0.1
Duty=0.05
Duty=0.02
Duty=0.01
Single
Notes:
Duty = t
1
/ t
2
T
J
= T
C
+ P
DM
x Z
ӨJC
x R
ӨJC
1
10
100
1000
0.1 1 10 100
R
DS(ON)
10us
100us
1ms
10ms
DC
SINGLE PULSE
R
ӨJC
=3.2°C/W
T
C
=25°C
TSM038N03PQ33
Taiwan Semiconductor
5 Version: B1610
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
PDFN33
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y
= Year Code
M
= Month Code
O
=Jan
P
=Feb
Q
=Mar
R
=Apr
`
S
=May
T
=Jun
U
=Jul
V
=Aug
W
=Sep
X
=Oct
Y
=Nov
Z
=Dec
L
= Lot Code (1~9, A~Z)
038N03
YML
TSM038N03PQ33
Taiwan Semiconductor
6 Version: B1610
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
P1-P3P4-P6

TSM038N03PQ33 RGG

Mfr. #:
Buy TSM038N03PQ33 RGG
Manufacturer:
Taiwan Semiconductor
Description:
MOSFET Power MOSFET, N-CHAN 30V, 80A, 3.8mOhm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet