OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TK2P60D(TE16L1,NQ)

P1-P3P4-P6
TK2P60D
2013-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ)
TK2P60D
Switching Regulator Applications
• Low drain-source ON-resistance: R
DS (ON)
= 3.3 Ω (typ.)
• High forward transfer admittance: ⎪Y
fs
⎪ = 1.0 S (typ.)
• Low leakage current: I
DSS
= 10 μA (V
DS
= 600 V)
• Enhancement-mode: V
th
= 2.4 to 4.4 V (V
DS
= 10 V, I
D
= 1 mA)
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics Symbol Rating Unit
Drain-source voltage V
DSS
600 V
Gate-source voltage V
GSS
±30 V
DC (Note 1) I
D
2
Drain current
Pulse (t = 1 ms)
(Note 1)
I
DP
8
A
Drain power dissipation (Tc = 25°C)
P
D
60 W
Single pulse avalanche energy
(Note 2)
E
AS
101 mJ
Avalanche current I
AR
2 A
Repetitive avalanche energy (Note 3) E
AR
6 mJ
Channel temperature T
ch
150 °C
Storage temperature range T
stg
-55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/’’Derating Concept and
Methods’’) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case R
th (ch-c)
2.08 °C/W
Thermal resistance, channel to ambient R
th (ch-a)
125 °C/W
Note 1: Please use devices on conditions that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 44.1 mH, R
G
= 25Ω, I
AR
= 2 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
1.1 ± 0. 2
0.1 ± 0. 1
1.0 5 MAX.
2.3 ± 0. 15
5.2 ± 0. 2
0.8 M AX.
0.6 M AX.
9.5 ± 0. 3
1.2 MA X.
1.5 ± 0. 2
6.5 ± 0. 2
1 2
3
0.6 M AX.
5.5 ± 0. 2
0.6 ± 0. 15
2.3 ± 0. 2
2.3 ± 0. 15
1. GATE
2. DRAIN
（HEAT SINK）
3. SOURSE
JEDEC ⎯
JEITA ⎯
TOSHIBA 2-7J1B
Weight : 0.36 g (typ.)
1
3
2
Start of commercial production
2009-09
TK2P60D
2013-11-01
2
Electrical Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current I
GSS
V
GS
= ±30 V, V
DS
= 0 V ⎯ ⎯ ±1 μA
Drain cut-off current I
DSS
V
DS
= 600 V, V
GS
= 0 V ⎯ ⎯ 10 μA
Drain-source breakdown voltage V
(BR) DSS
I
D
= 10 mA, V
GS
= 0 V 600 ⎯ ⎯ V
Gate threshold voltage V
th
V
DS
= 10 V, I
D
= 1 mA 2.4 ⎯ 4.4 V
Drain-source ON-resistance R
DS (ON)
V
GS
= 10 V, I
D
= 1 A ⎯ 3.3 4.3 Ω
Forward transfer admittance ⎪Y
fs
⎪ V
DS
= 10 V, I
D
= 1 A 0.3 1.0 ― S
Input capacitance C
iss
― 280 ―
Reverse transfer capacitance C
rss
― 1.5 ―
Output capacitance C
oss
V
DS
= 25 V, V
GS
= 0 V, f = 1 MHz
― 30 ―
pF
Rise time t
r
⎯
15
⎯
Turn-on time t
on
⎯
35
⎯
Fall time t
f
⎯
7
⎯
Switching time
Turn-off time t
off
⎯
55
⎯
ns
Total gate charge Q
g
⎯ 7 ⎯
Gate-source charge Q
gs
⎯ 4 ⎯
Gate-drain charge Q
gd
V
DD
≈ 400 V, V
GS
= 10 V, I
D
= 2 A
⎯ 3 ⎯
nC
Source-Drain Ratings and Characteristics
(Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Continuous drain reverse current
(Note 1)
I
DR
⎯ ⎯ ⎯ 2 A
Pulse drain reverse current (Note 1) I
DRP
⎯ ⎯ ⎯ 8 A
Forward voltage (diode) V
DSF
I
DR
= 2 A, V
GS
= 0 V ⎯ ⎯ -1.7
V
Reverse recovery time t
rr
⎯ 550 ⎯ ns
Reverse recovery charge Q
rr
I
DR
= 2 A, V
GS
= 0 V,
dI
DR
/dt = 100 A/μs
⎯ 2.2 ⎯ μC
Marking
Lot No.
Note 4
Part No.
(or abbreviation code)
K2P60D
Note 4 : A line under a Lot No. identifies the indication of product Labels
`G`/RoHS COMPATIBLE or `G`/RoHS `Pb`
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is Directive 2011/65/EU of the European Parliament and
of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
0 V
10 V
V
GS
V
DD
≈ 200 V
I
D
= 1 A Vout
50 Ω
Duty ≤ 1%, t
w
= 10 μs
R
L
=
200 Ω
TK2P60D
2013-11-01
3
Tc = −55°C
25
100
10
8
8.5
7.5
V
GS
= 6 V
7
6.5
8
7
7.5
7.3
V
GS
= 5.5 V
6.5
6
10
0.1
10
0.1 10
1
1
0
20
4
8
16
40
20
12 16
12
8
1
0.5
I
D
= 2 A
0
4
0.8
1.6
3.2
2
0 10
6 8
2.4
4
100
25
Tc = −55°C
0
4
0.8
2.4
1.6
3.2
100
50
20 30 40
0
2
0.4
1.2
0.8
1.6
2 0
10
46 8
I
D
– V
DS
Drain current I
D
(A)
Drain−source voltage V
DS
(V)
I
D
– V
DS
Drain current I
D
(A)
Drain
−
source voltage V
DS
(V)
Common source
Tc = 25°C
Pulse test
I
D
– V
GS
Drain current I
D
(A)
Gate−source voltage V
GS
(V)
V
DS
– V
GS
Drain−source voltage V
DS
(V)
Gate
−
source voltage V
GS
(V)
⎪Y
fs
⎪ − I
D
Forward transfer admittance
⎪Y
fs
⎪ (S)
Drain current I
D
(A)
R
DS (ON)
− I
D
Drain−source ON-resistance
R
DS (ON)
(Ω)
Drain current I
D
(A)
Common source
V
DS
= 20 V
Pulse test
Common source
V
DS
= 10 V
Pulse test
Common source
Tc = 25°C
Pulse test
Common source
Tc = 25°C
Pulse test
9
100
10
V
GS
= 10 V
1
1
10
0.1
Common source
Tc = 25°C
Pulse test
P1-P3P4-P6

TK2P60D(TE16L1,NQ)

Mfr. #:
Buy TK2P60D(TE16L1,NQ)
Manufacturer:
Toshiba
Description:
MOSFET N-Ch MOS 2A 600V 60W 280pF 3.4 Ohm
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet