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S320KR

P1-P2
V
RRM
= 600 V - 1200 V
I
F
=320 A
Features
• High Surge Capability DO-9 Package
• Types up to 1200 V V
RRM
Parameter Symbol S320J (R) S320K (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
600 800 V
S320J thru S320QR
S320Q (R)
1000
S320M (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
1200
pp g
RMS reverse voltage
V
RMS
420 566 V
DC blocking voltage
V
DC
600 800 V
Continuous forward current
I
F
320 320 A
Operating temperature
T
j
-60 to 180 -60 to 180 °C
Storage temperature
T
stg
-60 to 200 -60 to 200 °C
Parameter Symbol S320J (R) S320K (R) Unit
Diode forward voltage 1.2 1.2
10 10 μA
12 12 mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.16 0.16 °C/W
12
A4700
Reverse current
I
R
V
F
4700
V
R
= 600 V, T
j
= 25 °C
I
F
= 300 A, T
j
= 25 °C
T
C
≤ 100 °C
Conditions
707
4700 4700
-60 to 200
320 320
‐60to200
S320Q (R)
10 10
S320M (R)
0.16
V
R
= 600 V, T
j
= 175 °C
0.16
1.2 1.2
12
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-60 to 180
‐60to180
T
C
= 25 °C, t
p
= 8.3 ms
848
12001000
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
www.genesicsemi.com
1
S320J thru S320QR
www.genesicsemi.com
2
P1-P2

S320KR

Mfr. #:
Buy S320KR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 800V 320A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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