BBY5802VH6327XTSA1

P1-P3 P4-P6 P7-P9 P10-P10

2007-09-19

1

BBY58...

Silicon Tuning Diodes

• Excellent linearity

• High Q hyperabrupt tuning diode

• Low series resistance

• Designed for low tuning voltage operation

for VCO's in mobile communications equipment

• For low frequency control elements

such as TCXOs and VCXOs

• Very low capacitance spread

• Pb-free (RoHS compliant) package

1)

• Qualified according AEC Q101

BBY58-02L/V

BBY58-02W

BBY58-03W

BBY58-06WBBY58-05W



!



,

, 

!



,

, 

Type Package Configuration L

S

(nH) Marking

BBY58-02L

BBY58-02V

BBY58-02W

BBY58-03W

BBY58-05W

BBY58-06W

TSLP-2-1

SC79

SCD80

SOD323

SOT323

SOT323

single, leadless

single

single

single

common cathode

common anode

0.4

0.6

0.6

0.6

1.4

1.4

88

8

88

8 yel.

B5s

B6s

Maximum Ratings at T

A

= 25°C, unless otherwise specified

Parameter

Symbol Value Unit

Diode reverse voltage V

R

10 V

Forward current I

F

20 mA

Operating temperature range T

op

-55 ... 150

°C

Storage temperature T

st

g

-55 ... 150

1

Pb-containing package may be available upon special request

2007-09-19

2

BBY58...

Electrical Characteristics at T

A

= 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Reverse current

V

R

= 8 V

V

R

= 8 V, T

A

= 85 °C

I

R

-

-

-

-

10

100

nA

AC Characteristics

Diode capacitance

V

R

= 1 V, f = 1 MHz

V

R

= 2 V, f = 1 MHz

V

R

= 3 V, f = 1 MHz

V

R

= 4 V, f = 1 MHz

V

R

= 6 V, f = 1 MHz

C

T

17.5

11.4

7.8

5.5

3.8

18.3

12.35

8.6

6

4.7

19.3

13.3

9.3

6.6

5.5

pF

Capacitance ratio

V

R

= 1 V, V

R

= 3 V, f = 1 MHz

C

T1

/C

T3

1.9 2.15 2.4

-

Capacitance ratio

V

R

= 1 V, V

R

= 4 V, f = 1 MHz

C

T1

/C

T4

2.7 3.05 3.5

Capacitance ratio

V

R

= 4 V, V

R

= 6 V, f = 1 MHz

C

T4

/C

T6

1.15 1.3 1.45

Series resistance

V

R

= 1 V, f = 470 MHz, BBY58-02L, -07L4

V

R

= 1 V, f = 470 MHz, all other

r

S

-

-

0.3

0.25

-

-

Ω

2007-09-19

3

BBY58...

Diode capacitance C

T

= ƒ (V

R

)

f = 1MHz

0 0.5 1 1.5 2 2.5 3 3.5 4

V

5

V

R

0

4

8

12

16

20

24

pF

32

C

T

Normalized diode capacitance

C

(TA)

/C

(25°C)

= ƒ(T

A

)

f = 1MHz, V

R

= Parameter

-30 -10 10 30 50 70

°C

100

T

A

0.95

0.96

0.97

0.98

0.99

1

1.01

1.02

1.03

-

1.05

C

TA

/C

25

1V

4V

Temperature coefficient of the diode

capacitance

T

Cc

= ƒ (V

R

)

0 0.5 1 1.5 2 2.5 3 3.5 4

V

5

V

R

-4

10

-3

10

1/°C

TC

C

P1-P3 P4-P6 P7-P9 P10-P10

BBY5802VH6327XTSA1

Mfr. #:

Buy BBY5802VH6327XTSA1

Manufacturer:

Infineon Technologies

Description:

Varactor Diodes RF DIODE

Lifecycle:

New from this manufacturer.

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