RN2501~RN2506
2014-03-01
1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2501, RN2502, RN2503
RN2504, RN2505, RN2506
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z Including two devices in SMV (super mini type with 5 leads)
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1501 to RN1506
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
(Ta = 25
°
C) (Q1, Q2 Common)
Equivalent Circuit
(Top View)
Characteristic Symbol Rating Unit
Collector-base voltage V
CBO
−50 V
Collector-emitter voltage
RN2501 to 2506
V
CEO
−50 V
RN2501 to 2504 −10
Emitter base voltage
RN2505, 2506
V
EBO
−5
V
Collector current I
C
−100 mA
Collector power dissipation P
C
* 300 mW
Junction temperature Tj 150 °C
Storage temperature range
RN2501 to 2506
Tstg −55 to150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
SMV
JEDEC ―
JEITA ―
TOSHIBA 2-3L1A
Weight: 14 mg (typ.)
Type No. R1 (kΩ)R2 (kΩ)
RN2501 4.7 4.7
RN2502 10 10
RN2503 22 22
RN2504 47 47
RN2505 2.2 47
RN2506 4.7 47
Unit: mm
Start of commercial production
1988-10
