OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

MSB92ASWT1G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2010
June, 2017 − Rev. 6
1 Publication Order Number:
MSB92ASWT1/D
MSB92ASWT1G,
MSB92AS1WT1G
PNP Silicon General
Purpose High Voltage
Transistor
This PNP Silicon Planar Transistor is designed for general purpose
amplifier applications. This device is housed in the SC-70/SOT-323
package which is designed for low power surface mount applications.
Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Symbol Value Unit
Collector-Base Voltage V
(BR)CBO
−300 Vdc
Collector-Emitter Voltage V
(BR)CEO
−300 Vdc
Emitter-Base Voltage V
(BR)EBO
−5.0 Vdc
Collector Current − Continuous I
C
500 mAdc
ESD Rating: Human Body Model
Machine Model
ESD Class 1C
Class C
−
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation (Note 1) P
D
150 mW
Junction Temperature T
J
150 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
Device Package Shipping
†
ORDERING INFORMATION
COLLECTOR
3
1
BASE
2
EMITTER
MSB92ASWT1G SC−70
(Pb−Free)
3000/Tape & Reel
www.onsemi.com
MSB92AS1WT1G SC−70
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
SC−70 (SOT−323)
CASE 419
STYLE 3
MARKING DIAGRAM
3
1
2
Dx = Device Code
M = Date Code*
G = Pb−Free Package
D3 M G
G
1
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
D5 M G
G
1
MSB92ASWT1G MSB92AS1WT1G
MSB92ASWT1G, MSB92AS1WT1G
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Min Max Unit
Collector-Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−300 − Vdc
Collector-Base Breakdown Voltage
(I
C
= −100 mAdc, I
E
= 0)
V
(BR)CBO
−300 − Vdc
Emitter-Base Breakdown Voltage
(I
E
= −100 mAdc, I
E
= 0)
V
(BR)EBO
−5.0 − Vdc
Collector-Base Cutoff Current
(V
CB
= 300 Vdc, I
E
= 0)
I
CBO
− −0.25
mA
Emitter−Base Cutoff Current
(V
EB
= −3.0 Vdc, I
B
= 0)
I
EBO
− −0.1
mA
DC Current Gain (Note 2)
(V
CE
= −10 Vdc, I
C
= −1.0 mAdc)
(V
CE
= −10 Vdc, I
C
= −10 mAdc)
(V
CE
= −10 Vdc, I
C
= −30 mAdc)
h
FE1
h
FE2
h
FE3
120
40
25
200
−
−
−
Collector-Emitter Saturation Voltage (Note 2)
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
V
CE(sat)
− −0.5 Vdc
Base−Emitter Saturation Voltage
(I
C
= −20 mAdc, I
B
= −2.0 mAdc)
V
BE(sat)
− −0.9 Vdc
SMALL SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= −10 mAdc, V
CE
= −20 Vdc, f = 20 MHz)
f
T
50 − MHz
Collector−Base Capacitance
(V
CB
= −20 Vdc, I
E
= 0, f = 1.0 MHz)
C
cb
− 6.0 pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
MSB92ASWT1G, MSB92AS1WT1G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain Figure 2. V
CE(sat)
Curve
I
C
, COLLECTOR CURRENT (A) I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0
200
400
0.10.010.0010.0001
0
0.1
0.2
0.5
0.6
Figure 3. V
BE(sat)
Curve Figure 4. V
BE(on)
Curve
Figure 5. Current−Gain Bandwidth Product Figure 6. Drain−to−Source Leakage Current
vs. Voltage
I
C
, COLLECTOR CURRENT (mA) I
B
, BASE CURRENT (mA)
1010.1
1
1000
100100.10.010.0010.0001
0
0.4
1.6
2.0
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLL−EMITT SATURATION
VOLTAGE (V)
f
T
, CURRENT−GAIN BANDWIDTH
PRODUCT
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
100
300
150°C
V
CE
= 5 V
25°C
I
C
/I
B
= 10
150°C
−55°C
0.3
0.4
0.7
100
V
CE
= 20 V
T
A
= 25°C
10
100
T
A
= 25°C
I
C
= 50 mA
25°C
−55°C
I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.4
0.7
0.8
V
BE(sat)
, BASE−EMITT SATURATION
VOLTAGE (V)
25°C
I
C
/I
B
= 10
150°C
−55°C
0.5
0.6
1.0
0.9
I
C
, COLLECTOR CURRENT (A)
0.10.010.0010.0001
0.2
0.3
0.4
0.7
0.8
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
25°C
150°C
−55°C
0.5
0.6
1.0
0.9
1.2
1.1
V
CE
= 5 V
0.8
1.2
1
I
C
= 10 mA
1.0 mA
0.1 mA
P1-P3P4-P5

MSB92ASWT1G

Mfr. #:
Buy MSB92ASWT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 300V PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet