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Document Number: 70038
S-71241–Rev. G, 25-Jun-07
Vishay Siliconix
DG201HS
Notes:
a.Refer to PROCESS OPTION FLOWCHART.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c.Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
FOR SINGLE SUPPLY
Parameter Symbol
Test Conditions
Unless Specified
V+ = 10.8 V to 16.5 V,
V- = GND = 0 V, V
IN
= 3 V, 0.8 V
f
Temp
b
Typ
c
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C
Unit Min
d
Max
d
Min
d
Max
d
Analog Switch
Analog Signal Range
e
V
ANALOG
Full 0 V+ 0 V+ V
Drain-Source
On-Resistance
r
DS(on)
I
S
= - 10 mA, V
D
= 8.5 V
V+ = 10.8 V
Room
Full
65
90
120
90
120
Ω
Switch Off Leakage Current
I
S(off)
V+ = 16.5 V
V
S
= 0.5 V, 10 V
V
D
= 10 V, 0.5 V
Room
Full
0.1
- 1
- 60
1
60
- 1
- 20
1
20
nA
I
D(off)
Room
Full
0.1
- 1
- 60
1
60
- 1
- 20
1
20
Channel On Leakage
Current
I
D(on)
+ I
S(on)
V+ = 16.5 V
V
D
= 0.5 V, 10 V
Room
Full
0.1
- 1
- 60
1
60
- 1
- 20
1
20
Digital Control
Input, High Voltage
V
INH
Full 2.4 2.4
V
Input, Low Voltage
V
INL
Full 0.8 0.8
Input Capacitance
C
IN
Full 5 pF
Input Current
I
INH
or I
INL
V+ = 16.5 V
V
IN
under test = 0.8 V, 3 V
Full - 1 1 - 1 1 µA
Dynamic Characteristics
Tur n- O n T i me
t
ON
R
L
= 1 kΩ, C
L
= 35 pF
V
S
= 2 V, V = 10.8 V
See Figure 2
Room
Full
50
70
50
70
ns
Tur n- O f f Ti m e
t
OFF1
Room
Full
50
70
50
70
t
OFF2
Room 150
Output Settling Time to 0.1 %
t
s
Room 180
Charge Injection Q
C
L
= 1 nF, V
S
= 0 V
V
gen
= 0 V, R
gen
= 0 Ω
Room 10 pC
Off Isolation OIRR
R
L
= 1 kΩ, C
L
= 10 pF
f = 100 kHz
Room 85
dB
Crosstalk
(Channel-to-Channel)
X
TALK
Any Other Channel Switches
R
L
= 1 kΩ, C
L
= 10 pF
f = 100 kHz
Room 100
Source Off Capacitance
C
S(off)
f = 1 MHz
Room 10
pFDrain Off Capacitance
C
D(off)
Room 10
Channel On Capacitance
C
D(on)
V
ANALOG
= 0 V
Room 30
Power Supply
Positive Supply Current I+
V+ = 15 V, V
IN
= 0 or 5 V
Full 10 10 mA
Power Consumption
c
P
C
Full 150 150 mW
