IXYH100N65A3 Datasheet IXYH100N65A3 | P1-P3

650V XPT

TM

IGBT

GenX3

TM

IXYH100N65A3

V

CES

= 650V

I

C110

= 100A

V

CE(sat)







1.80V

t

fi(typ)

= 86ns

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 175°C 650 V

V

CGR

T

J

= 25°C to 175°C, R

GE

= 1M 650 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C (Chip Capability) 240 A

I

C110

T

C

= 110°C 100 A

I

CM

T

C

= 25°C, 1ms 480 A

I

A

T

C

= 25°C 50 A

E

AS

T

C

= 25°C 830 mJ

SSOA V

GE

= 15V, T

VJ

= 150°C, R

G

= 2 I

CM

= 200 A

(RBSOA) Clamped Inductive Load @V

CE

 V

CES

t

sc

V

GE

= 15V, V

CE

= 360V, T

J

= 150°C 8 μs

(SCSOA) R

G

= 82, Non Repetitive

P

C

T

C

= 25°C 470 W

T

J

-55 ... +175 °C

T

JM

175 °C

T

stg

-55 ... +175 °C

TT

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6 mm (0.062in.) from Case for 10s 260 °C

M

d

Mounting Torque 1.13/10 Nm/lb.in

Weight 6g

DS100803(02/17)

Low-Vsat IGBT

for up to 5kHz Switching

Symbol Test Conditions Characteristic Values

(T

J

= 25C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250A, V

GE

= 0V 650 V

V

GE(th)

I

C

= 250A, V

CE

= V

GE

3.5 6.0 V

I

CES

V

CE

= V

CES

,

V

GE

= 0V 25 A

T

J

= 125C 500 A

I

GES

V

CE

= 0V, V

GE

= 20V 100 nA

V

CE(sat)

I

C

= 70A, V

GE

= 15V, Note 1 1.50 1.80 V

T

J

= 150C 1.65 V

Features



Optimized for up to 5kHz Switching



Square RBSOA



Avalanche Rated



Short Circuit Capability



High Current Handling Capability

Advantages



High Power Density



Low Gate Drive Requirement

Applications



UPS



Motor Drives



SMPS



PFC Circuits



Battery Chargers



Low Frequency Power Inverters



AC Switches

Advance Technical Information

G = Gate C = Collector

E = Emitter Tab = Collector

TO-247

G

C

E

Tab

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYH100N65A3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Symbol Test Conditions Characteristic Values

(T

J

= 25°C Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 60A, V

CE

= 10V, Note 1 32 58 S

C

ie

s

4780 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 290 pF

C

res

103 pF

Q

g

178 nC

Q

ge

I

C

= 70A, V

GE

= 15V, V

CE

= 0.5 • V

CES

31 nC

Q

gc

78 nC

t

d(on)

24 ns

t

ri

64 ns

E

on

3.15 mJ

t

d(off)

174 ns

t

fi

86 ns

E

of

f

2.20 mJ

t

d(on)

23 ns

t

ri

64 ns

E

on

4.00 mJ

t

d(off)

234 ns

t

fi

225 ns

E

off

3.70 mJ

R

thJC

0.18 °C/W

R

thCS

0.21 °C/W

Notes:

1. Pulse test, t  300μs, duty cycle, d  2%.

2. Switching times & energy losses may increase for higher V

CE

(clamp), T

J

or R

G

.

Inductive load, T

J

= 150°C

I

C

= 50A, V

GE

= 15V

V

CE

= 400V, R

G

= 2

Note 2

Inductive load, T

J

= 25°C

I

C

= 50A, V

GE

= 15V

V

CE

= 400V, R

G

= 2

Note 2

ADVANCE TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

1 - Gate

2,4 - Collector

3 - Emitter

TO-247 (IXYH) Outline

3

D

S

A

L

D

R

E

E1

L1

D1

D2

A2

Q

C

B

A

0P 0K M D B M

b4

0P1

1

2

4

b

c

e

IXYS OPTION

R1R1R1R1

J M C A M

b2

A1

IXYH100N65A3

Fig. 1. Output Characteristics @ T

J

= 25

o

C

0

20

40

60

80

100

120

140

0 0.4 0.8 1.2 1.6 2 2.4 2.8

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

12V

11V

10V

9V

8V

6V

7V

Fig. 2. Extended Output Characteristics @ T

J

= 25

o

C

0

100

200

300

400

500

600

700

800

0 2 4 6 8 10 12 14 16 18 20 22

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

10V

11V

13V

8V

7V

9V

14V

12V

Fig. 3. Output Characteristics @ T

J

= 150

o

C

0

20

40

60

80

100

120

140

0 0.5 1 1.5 2 2.5 3 3.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

10V

7V

8V

9V

6V

5V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150 175

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 70A

I

C

= 35A

I

C

= 140A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 140A

T

J

= 25ºC

70A

35A

Fig. 6. Input Admittance

0

50

100

150

200

250

300

350

4567891011

V

GE

- Volts

I

C

-

Amperes

- 40

o

C

T

J

= 150

o

C

25

o

C

IXYH100N65A3

IXYH100N65A3

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