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BYM12-50HE3_A/I

P1-P3P4-P4
BYM12-xxx, EGL41x
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
1
Document Number: 88581
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
250 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case: DO-213AB, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Two bands indicate cathode end - 1
st
band
denotes device type and 2
nd
band denotes repetitive peak
reverse voltage rating
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
50 V to 400 V
I
FSM
30 A
t
rr
50 ns
V
F
1.0 V, 1.25 V
T
J
max. 175 °C
Package DO-213AB (GL41)
Diode variations Single die
DO-213AB (GL41)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYM12-50 BYM12-100 BYM12-150 BYM12-200 BYM12-300 BYM12-400
UNIT
FAST EFFICIENT DEVICE:
1
ST
BAND IS GREEN
EGL41A EGL41B EGL41C EGL41D EGL41F EGL41G
Polarity color bands (2
nd
band) Gray Red Pink Orange Brown Yellow
Maximum repetitive peak
reverse voltage
V
RRM
50 100 150 200 300 400 V
Maximum RMS voltage V
RMS
35 70 105 140 210 280 V
Maximum DC blocking voltage V
DC
50 100 150 200 300 400 V
Maximum average forward rectified
current at T
T
= 75 °C
I
F(AV)
1.0 A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load
I
FSM
30 A
Operating junction and storage
temperature range
T
J
, T
STG
- 65 to + 175 °C
BYM12-xxx, EGL41x
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
2
Document Number: 88581
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Notes
(1)
Thermal resistance from junction to ambient, 0.24" x 0.24" (6.0 mm x 6.0 mm) copper pads to each terminal
(2)
Thermal resistance from junction to terminal, 0.24" x 0.24" (6.0 mm x 6.0 mm) copper pads to each terminal
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER
TEST
CONDITIONS
SYMBOL
BYM12-50 BYM12-100 BYM12-150 BYM12-200 BYM12-300 BYM12-400
UNIT
EGL41A EGL41B EGL41C EGL41D EGL41F EGL41G
Max. instantaneous
forward voltage
1.0 A V
F
(1)
1.0 1.25 V
Max. DC reverse
current at rated DC
blocking voltage
T
A
= 25 °C
I
R
(1)
5.0
μA
T
A
= 125 °C 50
Max. reverse
recovery time
I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
50 ns
Typical junction
capacitance
4.0 V, 1 MHz C
J
20 14 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL
BYM12-50 BYM12-100 BYM12-150 BYM12-200 BYM12-300 BYM12-400
UNIT
EGL41A EGL41B EGL41C EGL41D EGL41F EGL41G
Maximum thermal resistance
R
JA
(1)
60
°C/W
R
JT
(2)
30
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGL41D-E3/96 0.114 96 1500 7" diameter plastic tape and reel
EGL41D-E3/97 0.114 97 5000 13" diameter plastic tape and reel
EGL41DHE3/96
(1)
0.114 96 1500 7" diameter plastic tape and reel
EGL41DHE3/97
(1)
0.114 97 5000 13" diameter plastic tape and reel
0
0
1.0
755025 100 125 150 175
0.5
Resistive or Inductive Load
Average Forward Rectified Current (A)
Lead Temperature (°C)
0
5.0
10
15
20
25
30
1 10010
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
BYM12-xxx, EGL41x
www.vishay.com
Vishay General Semiconductor
Revision: 11-Dec-13
3
Document Number: 88581
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.40.2 0.6 0.8 1.0 1.2 1.4 1.6
0.01
0.1
10
1
50
1.8
T
J
= 150 °C
T
J
= 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
EGL41A thru EGL41D
EGL41F thru EGL41G
6040200 10080
0.01
0.1
10
1
100
1000
T
J
= 100 °C
T
J
= 150 °C
T
J
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
20
10
30
40
50
60
70
0
EGL41A thru EGL41D
EGL41F thru EGL41G
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.01 0.1 101 100
100
10
1
0.1
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
D1 =
0.105
0.095
(2.67)
(2.41)
+ 0
- 0.008 (0.20)
D2
DO-213AB (GL41)
Solderable Ends
1
st
Band
D2 = D1
1
st
Band Denotes Type and Positive End (Cathode)
0.138 (3.5)
MAX.
0.049 (1.25)
MIN.
0.118 (3.0)
MIN.
0.238 (6.0)
REF.
Mounting Pad Layout
0.022 (0.56)
0.018 (0.46)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
P1-P3P4-P4

BYM12-50HE3_A/I

Mfr. #:
Buy BYM12-50HE3_A/I
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1A,50V,50NS GL41 AEC-Q101 Qualified
Lifecycle:
New from this manufacturer.
Delivery:
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