IRG4BH20K-SPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) — 28 43 I
C
= 5.0A
Q
ge
Gate - Emitter Charge (turn-on) — 4.4 6.6 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) — 12 18 V
GE
= 15V
t
d(on)
Turn-On Delay Time — 23 —
t
r
Rise Time — 26 — T
J
= 25°C
t
d(off)
Turn-Off Delay Time — 93 140 I
C
=5.0A, V
CC
= 960V
t
f
Fall Time — 270 400 V
GE
= 15V, R
G
= 50Ω
E
on
Turn-On Switching Loss — 0.45 — Energy losses include "tail"
E
off
Turn-Off Switching Loss — 0.44 — mJ See Fig. 9,10,14
E
ts
Total Switching Loss — 0.89 1.2
t
sc
Short Circuit Withstand Time 10 — — µs V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 50Ω
t
d(on)
Turn-On Delay Time — 23 — T
J
= 150°C,
t
r
Rise Time — 28 — I
C
= 5.0A, V
CC
= 960V
t
d(off)
Turn-Off Delay Time — 100 — V
GE
= 15V, R
G
= 50Ω
t
f
Fall Time — 620 — Energy losses include "tail"
E
ts
Total Switching Loss — 1.7 — mJ See Fig. 10,11,14
L
E
Internal Emitter Inductance — 7.5 — nH Between lead and center of die contact
C
ies
Input Capacitance — 435 — V
GE
= 0V
C
oes
Output Capacitance — 44 — pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance — 8.3 — ƒ = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 1200 — — V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage 18 — — V V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage — 1.13 — V/°C V
GE
= 0V, I
C
= 2.5mA
— 3.17 4.3 I
C
= 5.0A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage — 4.04 — I
C
= 11A See Fig.2, 5
— 2.84 — I
C
= 5.0A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.5 — 6.5 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage — -10 — mV/°C V
CE
= V
GE
, I
C
= 1mA
g
fe
Forward Transconductance 2.3 3.5 — S V
CE
= 100 V, I
C
= 5.0A
— — 250 V
GE
= 0V, V
CE
= 1200V
— — 2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
— — 1000 V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current — — ±100 nA V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
µA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
=50Ω,
(See fig. 13a)
* When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques
refer to application note #AN-994.
