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CNY64ABST

P1-P3P4-P6P7-P9P10-P11
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 26-Jun-14
1
Document Number: 82387
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, Very High Isolation Voltage
DESCRIPTION
The CNY6XST, the high isolation voltage SMD version
optocouplers consist of a phototransistor optically coupled
to a gallium arsenide infrared-emitting diode in a 4 pin
plastic package.
The single components are mounted opposite one another,
providing a distance between input and output for highest
safety requirements of > 3 mm.
VDE STANDARDS
These couplers perform safety functions according to the
following equipment standards:
• DIN EN 60747-5-5 (VDE 0884-5)
Optocoupler for electrical safety requirements
• IEC 60065
Safety for mains-operated electronic and related
household apparatus
• VDE 0160
Electronic equipment for electrical power installation
FEATURES
• Rated recurring peak voltage (repetitive)
V
IORM
= 1450 V
peak
• Thickness through insulation ≥ 3 mm
• Creepage current resistance according to
VDE 0303/IEC 60112 comparative tracking
index: CTI ≥ 475
• Moisture sensitivity level MSL4
- Follow defined storage and soldering
requirements
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Solar and wind power diagnostic, monitoring, and
communication equipment
• Welding equipment
• High voltage motors
• Switch-mode power supplies
• Line receiver
• Computer peripheral interface
• Microprocessor system interface
• Circuits for safe protective separation against electrical
shock according to safety class II (reinforced isolation):
- for appl. class I to IV at mains voltage ≤ 300 V
- for appl. class I to IV at mains voltage ≤ 600 V
- for appl. class I to III at mains voltage ≤ 1000 V
according to DIN EN 60747-5-5 (VDE 0884-5)
AGENCY APPROVALS
• DIN EN 60747-5-5 (VDE 0884-5)
• UL1577, file no. E76222
• VDE related features:
- rated impulse voltage (transient overvoltage),
V
IOTM
= 12 kV
peak
- isolation test voltage (partial discharge test voltage),
V
pd
= 2.8 kV
peak
C
E
A
C
Top View
17187-5
V
DE
17187-6
CNY65ST
CNY64ST
ORDERING INFORMATION
CNY6 #XXXST
PART NUMBER PACKAGE
OPTION
CTR BIN
AGENCY CERTIFIED/PACKAGE
CTR (%)
5 mA
UL, VDE 50 to 300 50 to 150 80 to 240 100 to 300
SMD-4 HV, 400 mil high isolation distance CNY64ST CNY64AYST CNY64ABST CNY64AGRST
SMD-4 HV, 600 mil high isolation distance CNY65ST CNY65AYST CNY65ABST CNY65AGRST
10.16 mm
15.24 mm
CNY64ST CNY65ST
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 26-Jun-14
2
Document Number: 82387
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
5V
Forward current I
F
75 mA
Forward surge current t
p
≤ 10 μs I
FSM
1.5 A
Power dissipation P
diss
120 mW
Junction temperature T
j
100 °C
OUTPUT
Collector emitter voltage V
CEO
32 V
Emitter collector voltage V
ECO
7V
Collector current I
C
50 mA
Collector peak current t
p
/T = 0.5, t
p
≤ 10 ms I
CM
100 mA
Power dissipation P
diss
130 mW
Junction temperature T
j
100 °C
COUPLER
AC isolation test voltage CNY64AxxxST t = 1 min V
ISO
8.2 kV
RMS
DC isolation test voltage CNY65AxxxST t = 1 s V
ISO
13.9 kV
Total power dissipation P
tot
250 mW
Ambient temperature range T
amb
-55 to +85 °C
Storage temperature range T
stg
-55 to +100 °C
Soldering temperature 2 mm from case, ≤ 10 s T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 50 mA V
F
1.32 1.6 V
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
OUTPUT
Collector emitter voltage I
C
= 1 mA V
CEO
32 V
Emitter collector voltage I
E
= 100 μA V
ECO
7V
Collector emitter leakage current V
CE
= 20 V, I
F
= 0 mA I
CEO
200 nA
COUPLER
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 1 mA V
CEsat
0.3 V
Cut-off frequency V
CE
= 5 V, I
F
= 10 mA, R
L
= 100 Ω f
c
110 kHz
Coupling capacitance f = 1 MHz C
k
0.3 pF
CNY64AYST, CNY64ABST, CNY64AGRST, CNY65AYST, CNY65ABST, CNY65AGRST
www.vishay.com
Vishay Semiconductors
Rev. 1.1, 26-Jun-14
3
Document Number: 82387
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• According to DIN EN 60747-5-2 (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety ratings.
Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
Fig. 1 - Safety Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 5 mA
CNY64ST CTR 50 300 %
CNY65ST CTR 50 300 %
CNY64AYST CTR 50 150 %
CNY65AYST CTR 50 150 %
CNY64ABST CTR 80 240 %
CNY65ABST CTR 80 240 %
CNY64AGRST CTR 100 300 %
CNY65AGRST CTR 100 300 %
SAFETY AND INSULATION PARAMETERS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Partial discharge test voltage -
routine test
100 %, t
test
= 1 s V
pd
2.8 kV
Partial discharge test voltage -
lot test (sample test)
t
Tr
= 60 s, t
test
= 10 s,
(see figure 2)
V
pd
2.2 kV
Insulation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
V
IO
= 500 V, T
amb
= 150 °C
(construction test only)
R
IO
10
9
Ω
Forward current I
si
120 mA
Power dissipation P
so
250 mW
Rated impulse voltage V
IOTM
12 kV
Safety temperature T
si
150 °C
Tracking resistance
(comparative tracking index)
Insulation group IVa CTI 475
Minimum external tracking
(creepage distance)
Measured from
input pins to output pins
CNY64ST ≥ 9.5 mm
CNY65ST ≥ 14 mm
0
25
50
75
100
125
150
175
200
225
250
0 25 50 75 100 125 150 175 200
T
amb
(°C)
22292
P
so
(mW)
I
si
(mA)
t
13930
t
1
, t
2
= 1 s to 10 s
t
3
, t
4
= 1 s
t
test
= 10 s
t
stres
= 12 s
V
IOTM
V
pd
V
IOWM
V
IORM
0
t
1
t
test
t
Tr
= 60 s
t
stres
t
3
t
4
t
2
P1-P3P4-P6P7-P9P10-P11

CNY64ABST

Mfr. #:
Buy CNY64ABST
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers PHOTOTRANSISTOR OUT CTR 80-240%
Lifecycle:
New from this manufacturer.
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