t [s]
FSM
[A]
Fig. 1 Surge overload current
I
TSM
: Crest value, t: duration
10
-3
10
-2
10
-1
10
0
10
1
800
600
400
200
0
T
VJ
= 45°C
T
VJ
= 125°C
50 HZ, 80% V
RRM
t [ms]
I
2
t
[A
2
s]
Fig. 2 I
2
t versus time (1-10 ms)
V
R
= 0 V
T
VJ
= 45°C
T
VJ
= 125°C
10
2
10
4
10
3
1 2 3 6 8 10
I
FAVM
[A]
T
C
[°C]
Fig. 3 Max. forward current
at case temperature
40
30
20
10
0
50
0 50 100 150
DC
180° sin
120°
60°
30°
200
DC
180° sin
120°
60°
30°
R
thJA
[KW]
1.5
2
2.5
3
4
5
6
8
Fig. 4 Power dissipation versus onstate current & ambient temperature (per diode)
P
T
T
A
[°C]I
TAVM
[A]
0 10 20 30 40 0 50 100 15050
80
60
40
20
0
60 200
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature; R = resistive load, L = inductive load
P
tot
I
dAVM
[A] T
A
[°C]
Circuit
B2
2x MDD26
R
thJA
[KW]
0.3
0.4
0.5
0.6
0.8
1.0
1.3
1.6
0 20 40 60 0 50 100 15080
50
150
200
250
0
100
R L
Rectifier
IXYS reserves the right to change limits, conditions and dimensions.
20161222bData according to IEC 60747and per semiconductor unless otherwise specified
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