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2N7002LT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2013
October, 2016 − Rev. 8
1 Publication Order Number:
2N7002L/D
2N7002L, 2V7002L
Small Signal MOSFET
60 V, 115 mA, N−Channel SOT−23
Features
• 2V Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable (2V7002L)
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Drain−Source Voltage V
DSS
60 Vdc
Drain−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
60 Vdc
Drain Current
− Continuous T
C
= 25°C (Note 1)
− Continuous T
C
= 100°C (Note 1)
− Pulsed (Note 2)
I
D
I
D
I
DM
±115
±75
±800
mAdc
Gate−Source Voltage
− Continuous
− Non−repetitive (t
p
≤ 50 ms)
V
GS
V
GSM
±20
±40
Vdc
Vpk
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 3) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
P
D
R
q
JA
225
1.8
556
mW
mW/°C
°C/W
Total Device Dissipation
(Note 4) Alumina Substrate, T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
P
D
R
q
JA
300
2.4
417
mW
mW/°C
°C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
3. FR−5 = 1.0 x 0.75 x 0.062 in.
4. Alumina = 0.4 x 0.3 x 0.025 in 99.5% alumina.
3
1
2
Device Package Shipping
†
ORDERING INFORMATION
2N7002LT1G
SOT−23
(Pb−Free)
3000 Tape & Reel
N−Channel
SOT−23
CASE 318
STYLE 21
MARKING
DIAGRAM
2
1
3
2N7002LT3G 10,000 Tape & Reel
www.onsemi.com
2V7002LT1G
SOT−23
(Pb−Free)
3000 Tape & Reel
2V7002LT3G 10,000 Tape & Reel
60 V
7.5 W @ 10 V,
500 mA
R
DS(on)
MAX
115 mA
I
D
MAXV
(BR)DSS
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
*Not for new design.
1
702 MG
G
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
702 = Device Code
M = Date Code*
G = Pb−Free Package
2N7002LT1H* 3000 Tape & Reel
2N7002L, 2V7002L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0, I
D
= 10 mAdc)
V
(BR)DSS
60 − − Vdc
Zero Gate Voltage Drain Current T
J
= 25°C
(V
GS
= 0, V
DS
= 60 Vdc) T
J
= 125°C
I
DSS
−
−
−
−
1.0
500
mAdc
Gate−Body Leakage Current, Forward
(V
GS
= 20 Vdc)
I
GSSF
− − 100 nAdc
Gate−Body Leakage Current, Reverse
(V
GS
= −20 Vdc)
I
GSSR
− − −100 nAdc
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 mAdc)
V
GS(th)
1.0 − 2.5 Vdc
On−State Drain Current
(V
DS
≥ 2.0 V
DS(on)
, V
GS
= 10 Vdc)
I
D(on)
500 − − mA
Static Drain−Source On−State Voltage
(V
GS
= 10 Vdc, I
D
= 500 mAdc)
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc)
V
DS(on)
−
−
−
−
3.75
0.375
Vdc
Static Drain−Source On−State Resistance
(V
GS
= 10 V, I
D
= 500 mAdc) T
C
= 25°C
T
C
= 125°C
(V
GS
= 5.0 Vdc, I
D
= 50 mAdc) T
C
= 25°C
T
C
= 125°C
r
DS(on)
−
−
−
−
−
−
−
−
7.5
13.5
7.5
13.5
Ohms
Forward Transconductance
(V
DS
≥ 2.0 V
DS(on)
, I
D
= 200 mAdc)
g
FS
80 − − mS
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
iss
− − 50 pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
oss
− − 25 pF
Reverse Transfer Capacitance
(V
DS
= 25 Vdc, V
GS
= 0, f = 1.0 MHz)
C
rss
− − 5.0 pF
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
(V
DD
= 25 Vdc, I
D
^ 500 mAdc,
R
G
= 25 W, R
L
= 50 W, V
gen
= 10 V)
t
d(on)
− − 20 ns
Turn−Off Delay Time t
d(off)
− − 40 ns
BODY−DRAIN DIODE RATINGS
Diode Forward On−Voltage
(I
S
= 11.5 mAdc, V
GS
= 0 V)
V
SD
− − −1.5 Vdc
Source Current Continuous
(Body Diode)
I
S
− − −115 mAdc
Source Current Pulsed I
SM
− − −800 mAdc
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2N7002L, 2V7002L
www.onsemi.com
3
TYPICAL ELECTRICAL CHARACTERISTICS
I
D
, DRAIN CURRENT (AMPS)
r
DS(on)
, STATIC DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS(th)
, THRESHOLD VOLTAGE (NORMALIZED)
I
D
, DRAIN CURRENT (AMPS)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
V
DS
, DRAIN SOURCE VOLTAGE (VOLTS)
Figure 1. Ohmic Region
1.0
0.8
0.6
0.4
0.2
100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0
V
GS
, GATE SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
1.2
1.05
1.1
1.10
1.0
0.95
0.9
0.85
0.8
0.75
0.7
-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140
T, TEMPERATURE (°C)
Figure 3. Temperature versus Static
Drain−Source On−Resistance
T, TEMPERATURE (°C)
Figure 4. Temperature versus Gate
Threshold Voltage
T
A
= 25°C
V
GS
= 10 V
9 V
8 V
7 V
6 V
4 V
3 V
5 V
V
DS
= 10 V
-55°C
25°C
125°C
V
GS
= 10 V
I
D
= 200 mA
V
DS
= V
GS
I
D
= 1.0 mA
P1-P3P4-P4

2N7002LT1G

Mfr. #:
Buy 2N7002LT1G
Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 115mA N-Channel
Lifecycle:
New from this manufacturer.
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