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MT4JTF25664HZ-1G6E1

P1-P3P4-P6P7-P9P10-P12P13-P14
DRAM Operating Conditions
Recommended AC operating conditions are given in the DDR3 component data sheets.
Component specifications are available on Micron’s web site. Module speed grades cor-
relate with component speed grades, as shown below.
Table 10: Module and Component Speed Grades
DDR3 components may exceed the listed module speed grades; module may not be available in all listed speed grades
Module Speed Grade Component Speed Grade
-2G1 -093
-1G9 -107
-1G6 -125
-1G4 -15E
-1G1 -187E
-1G0 -187
-80C -25E
-80B -25
Design Considerations
Simulations
Micron memory modules are designed to optimize signal integrity through carefully de-
signed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system's
memory bus to ensure adequate signal integrity of the entire memory system.
Power
Operating voltages are specified at the DRAM, not at the edge connector of the module.
Designers must account for any system voltage drops at anticipated power levels to en-
sure the required supply voltage is maintained.
1GB, 2GB (x64, SR) 204-Pin DDR3 SODIMM
DRAM Operating Conditions
PDF: 09005aef84c19d7c
jtf4c128_256x64hz.pdf - Rev. C 5/13
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
I
DD
Specifications
Table 11: DDR3 I
DD
Specifications and Conditions – 1GB (Die Revision K)
Values are for the MT41J128M16 DDR3 SDRAM only and are computed from values specified in the 2Gb (128 Meg x 16)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
196 192 184 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
276 268 248 mA
Precharge power-down current: Slow exit I
DD2P0
48 48 48 mA
Precharge power-down current: Fast exit I
DD2P1
60 60 60 mA
Precharge quiet standby current I
DD2Q
88 88 88 mA
Precharge standby current I
DD2N
92 92 92 mA
Precharge standby ODT current I
DD2NT
148 144 132 mA
Active power-down current I
DD3P
88 88 88 mA
Active standby current I
DD3N
148 144 132 mA
Burst read operating current I
DD4R
540 460 380 mA
Burst write operating current I
DD4W
584 508 428 mA
Refresh current I
DD5B
728 724 716 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
48 48 48 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
60 60 60 mA
All banks interleaved read current I
DD7
808 716 636 mA
Reset current I
DD8
56 56 56 mA
1GB, 2GB (x64, SR) 204-Pin DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef84c19d7c
jtf4c128_256x64hz.pdf - Rev. C 5/13
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Table 12: DDR3 I
DD
Specifications and Conditions – 2GB (Die Revision E)
Values are for the MT41J256M16 DDR3 SDRAM only and are computed from values specified in the 4Gb (256 Meg x 16)
component data sheet
Parameter Symbol 1600 1333 1066 Units
Operating current 0: One bank ACTIVATE-to-PRECHARGE I
DD0
264 232 220 mA
Operating current 1: One bank ACTIVATE-to-READ-to-PRE-
CHARGE
I
DD1
348 336 320 mA
Precharge power-down current: Slow exit I
DD2P0
72 72 72 mA
Precharge power-down current: Fast exit I
DD2P1
128 112 104 mA
Precharge quiet standby current I
DD2Q
128 112 108 mA
Precharge standby current I
DD2N
128 116 112 mA
Precharge standby ODT current I
DD2NT
168 156 140 mA
Active power-down current I
DD3P
152 140 128 mA
Active standby current I
DD3N
188 180 164 mA
Burst read operating current I
DD4R
940 808 740 mA
Burst write operating current I
DD4W
684 608 548 mA
Refresh current I
DD5B
940 912 896 mA
Self refresh temperature current: MAX T
C
= 85°C I
DD6
80 80 80 mA
Self refresh temperature current (SRT-enabled): MAX T
C
= 95°C I
DD6ET
100 100 100 mA
All banks interleaved read current I
DD7
972 868 792 mA
Reset current I
DD8
80 80 80 mA
1GB, 2GB (x64, SR) 204-Pin DDR3 SODIMM
I
DD
Specifications
PDF: 09005aef84c19d7c
jtf4c128_256x64hz.pdf - Rev. C 5/13
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
P1-P3P4-P6P7-P9P10-P12P13-P14

MT4JTF25664HZ-1G6E1

Mfr. #:
Buy MT4JTF25664HZ-1G6E1
Manufacturer:
Micron
Description:
MODULE DDR3 SDRAM 2GB 204SODIMM
Lifecycle:
New from this manufacturer.
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