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IRF2903ZSPBF

P1-P3P4-P6P7-P9P10-P11
07/22/10
www.irf.com 1
HEXFET
®
Power MOSFET
This HEXFET
®
Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
applications.
Description
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
Features
IRF2903ZSPbF
IRF2903ZLPbF
V
DSS
= 30V
R
DS(on)
= 2.4mΩ
I
D
= 75A
S
D
G
GDS
Gate Drain Source
D
2
Pak TO-262
S
D
G
D
S
D
G
D
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
(Silicon Limited)
A
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
(Package Limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C Power Dissipation
W
Linear Derating Factor
W/°C
V
GS
Gate-to-Source Voltage
V
E
AS (Thermally limited)
Single Pulse Avalanche Energy
mJ
E
AS
(Tested )
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
T
J
Operating Junction and
T
STG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max.
Units
R
θJC
Junction-to-Case ––– 0.65
R
θJA
Junction-to-Ambient ––– 62
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
––– 40
-55 to + 175
300 (1.6mm from case )
231
1.54
± 20
Max.
235
166
1020
75
820
231
See Fig.12a, 12b, 15, 16
PD - 96098A
IRF2903ZS/ZLPbF
2 www.irf.com
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.9 2.4
mΩ
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
gfs Forward Transconductance 120 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Q
g
Total Gate Charge ––– 160 240
Q
gs
Gate-to-Source Charge ––– 51 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 58 –––
t
d(on)
Turn-On Delay Time ––– 24 –––
t
r
Rise Time ––– 100 –––
t
d(off)
Turn-Off Delay Time ––– 48 ––– ns
t
f
Fall Time ––– 37 –––
L
D
Internal Drain Inductance ––– 4.5 ––– Between lead,
nH 6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
C
iss
Input Capacitance ––– 6320 –––
C
oss
Output Capacitance ––– 1980 –––
C
rss
Reverse Transfer Capacitance ––– 1100 ––– pF
C
oss
Output Capacitance ––– 5930 –––
C
oss
Output Capacitance ––– 2010 –––
C
oss
eff.
Effective Output Capacitance ––– 3050 –––
Source-Drain Ratin
g
s and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 75
(Body Diode) A
I
S
M
Pulsed Source Current ––– ––– 1020
(Body Diode)
V
S
D
Diode Forward Voltage ––– ––– 1.3 V
t
r
r
Reverse Recovery Time ––– 34 51 ns
Q
r
r
Reverse Recovery Charge ––– 29 44 nC
t
o
n
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= 10V, I
D
= 75A
I
D
= 75A
V
DS
= 24V
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 20V
V
GS
= -20V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 75A, V
GS
= 0V
T
J
= 25°C, I
F
= 75A, V
DD
= 15V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 150µA
V
DS
= 30V, V
GS
= 0V
V
DS
= 30V, V
GS
= 0V, T
J
= 125°C
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 24V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 24V
V
GS
= 10V
V
DD
= 15V
I
D
= 75A
R
G
= 3.2
Ω
IRF2903ZS/ZLPbF
www.irf.com 3
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
Vs. Drain Current
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60µs PULSE WIDTH
Tj = 175°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
0.1 1 10 100 1000
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
≤ 60µs PULSE WIDTH
Tj = 25°C
4.5V
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
V
GS
, Gate-to-Source Voltage (V)
0.1
1.0
10.0
100.0
1000.0
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
V
DS
= 25V
≤ 60µs PULSE WIDTH
T
J
= 25°C
T
J
= 175°C
0 20 40 60 80 100 120 140 160 180
I
D,
Drain-to-Source Current (A)
0
40
80
120
160
200
240
G
f
s
,
F
o
r
w
a
r
d
T
r
a
n
s
c
o
n
d
u
c
t
a
n
c
e
(
S
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 10V
380µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P11

IRF2903ZSPBF

Mfr. #:
Buy IRF2903ZSPBF
Manufacturer:
Infineon / IR
Description:
MOSFET 30V 1 N-CH HEXFET 2.4mOhms 160nC
Lifecycle:
New from this manufacturer.
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