VS-80APF0..PbF Series, VS-80APF0..-M3 Series
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Vishay Semiconductors
Revision: 11-Feb-16
2
Document Number: 93722
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
F(AV)
T
C
= 95 °C, 180° conduction half sine wave 80
A
Maximum peak one cycle
non-repetitive surge current
I
FSM
10 ms sine pulse, rated V
RRM
applied 850
10 ms sine pulse, no voltage reapplied 1000
Maximum I
2
t for fusing I
2
t
10 ms sine pulse, rated V
RRM
applied 3610
A
2
s
10 ms sine pulse, no voltage reapplied 5100
Maximum I
2
t for fusing I
2
t t = 0.1 ms to 10 ms, no voltage reapplied 51 000 A
2
s
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop V
FM
80 A, T
J
= 25 °C 1.25 V
Forward slope resistance r
t
T
J
= 150 °C
3.5 m
Threshold voltage V
F(TO)
0.85 V
Maximum reverse leakage current I
RM
T
J
= 25 °C
V
R
= Rated V
RRM
0.1
mA
T
J
= 150 °C 17
RECOVERY CHARACTERISTICS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Reverse recovery time t
rr
I
F
at 40 A
pk
25 A/μs
25 °C
190 ns
Reverse recovery current I
rr
3.4 A
Reverse recovery charge Q
rr
0.5 μC
Snap factor S 0.5
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
, T
Stg
-40 to +150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation 0.35
°C/W
Maximum thermal resistance,
junction to ambient
R
thJA
40
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth, and greased 0.2
Approximate weight
6g
0.21 oz.
Mounting torque
minimum 6 (5)
kgf · cm
(Ibf · in)
maximum 12 (10)
Marking device Case style TO-247AC
80APF02
80APF04
80APF06
I
FM
t
rr
di
dt
I
RM(REC)
Q
rr
t
