ZXCT1107/1109/1110
LOW POWER HIGH-SIDE CURRENT MONITORS
ZXCT1107/1109/1110
Document number: DS35033 Rev. 3 - 2
4 of 16
www.diodes.com
JULY 2011
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Diodes Incorporated
NEW PRODUCT
Electrical Characteristics (T
A
= 25°C, V
S+
= 20V, V
SENSE
5
= 100mV, R
GAIN
= 0 unless otherwise stated) (cont.)
ZXCT1110
Symbol Parameter Conditions
T
A
Min Typ Max Units
I
Q
GND pin current
V
SENSE
5
= 0V
25°C 3 5
µA
-40°C 2.2
125°C 5.8
I
S-
S- input current
25°C 19 100
nA
-40°C 16
125°C 35
CMSR Common-Mode Sense rejection
V
S+
= 2.5V to 36V
25°C 0.1 0.4
µA/V
-40°C 0.13
125°C 0.05
I
OO
Output Offset current
6,7
V
SENSE
5
= 10mV
25°C 0 ±4
µA
-40°C -1.8
125°C +2.5
G
T
Transconductance
V
SENSE
5
= 10mV to
150mV
25°C 3.928 4 4.072
mA/V
-40°C 3.9
125°C 4.08
GE Transconductance error
V
SENSE
5
= 10mV to
150mV
25°C -1.8 1.8 %
I
OUT
G
T-TC
Transconductance temp.co 25°C 265 ppm/ºC
V
OUTH
Output relative to V
S-
25°C -1 -0.78
V
-40°C -0.88
125°C -0.63
BW -3dB Small Signal Bandwidth
V
SENSE
5
(AC)
=
10mV
PP,
R
GAIN
=
2.5k
25°C 0.65 MHz
Notes. 5. V
SENSE
= “V
SENSE+
” – “V
SENSE
-
“
6. Output current characteristic measured with low impedance ammeter connected to GND
7. Defined as difference between actual output current and 40µA; measured at V
SENSE
=10mV. This will include an error due to bias
currents of the device.
8. For V
SENSE
> 10mV, the internal voltage-current converter is fully linear. This enables a true offset to be defined and used.
