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IS62WV1288BLL-55QLI

P1-P3P4-P6P7-P9P10-P12P13-P15
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1
Rev. E
11/12/08
IS62WV1288ALL
IS62WV1288BLL, IS65WV1288BLL
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-
est version of this device specification before relying on any published information and before placing orders for products.
128K x 8 LOW VOLTAGE,
ULTRA LOW POWER CMOS STATIC RAM
FEATURES
• High-speedaccesstime:45ns,55ns,70ns
• CMOSlowpoweroperation:
30 mW (typical) operating
15µW(typical)CMOSstandby
• TTLcompatibleinterfacelevels
• Singlepowersupply:
1.65V--2.2V V
d d (62WV1288ALL)
2.5V--3.6V V
d d (62WV1288BLL/ 65WV1288BLL)
• Fullystaticoperation:noclockorrefresh
required
• Threestateoutputs
• AutomotiveandIndustrialtemperaturesavailable
• Lead-freeavailable
DESCRIPTION
The ISSI IS62WV1288ALL / IS62/65WV1288BLL are
high-speed,1MbitstaticRAMsorganizedas128Kwords
by 8 bits. It is fabricated using ISSI's high-performance
CMOStechnology.This highly reliableprocess coupled
with innovative circuit design techniques, yields high-
performance and low power consumption devices.
When CS1is HIGH (deselected) orwhenCS2isLOW
(deselected), the device assumes a standby mode at
which the power dissipation can be reduced down with
CMOSinputlevels.
Easy memory expansion is provided by using Chip Enable
andOutputEnableinputs.TheactiveLOWWriteEnable
(WE) controls both writing and reading of the memory.
The IS62WV1288ALL and IS62/65WV1288BLL are
packagedintheJEDECstandard32-pinTSOP(TYPEI),
sTSOP(TYPEI),SOP,and36-pinminiBGA.
FUNCTIONAL BLOCK DIAGRAM
DECEMBER 2008
A0-A16
CS1
OE
WE
128K x 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
V
DD
I/O
DATA
CIRCUIT
I/O0-I/O7
CS2
2 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. E
11/12/08
IS62WV1288ALL, IS62WV1288BLL, IS65WV1288BLL
PIN DESCRIPTIONS
A0-A16 Address Inputs
CS1 Chip Enable 1 Input
CS2 Chip Enable 2 Input
OE OutputEnableInput
WE Write Enable Input
I/O0-I/O7 Input/Output
NC No Connection
Vd d Power
GND Ground
36-pin mini BGA (B) (6mm x 8mm)
32-pin TSOP (TYPE I) (T),
32-pin sTSOP (TYPE I) (H)
PIN CONFIGURATION
32-pin SOP (Q)
1 2 3 4 5 6
A
B
C
D
E
F
G
H
A0
I/O4
I/O5
GND
V
DD
I/O6
I/O7
A9
A1
A2
OE
A10
CS2
WE
NC
NC
CS1
A11
A3
A4
A5
NC
A16
A12
A6
A7
A15
A13
A8
I/O0
I/O1
V
DD
GND
I/O2
I/O3
A14
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
WE
CS2
A15
V
DD
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
V
DD
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O7
I/O6
I/O5
I/O4
I/O3
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 3
Rev. E
11/12/08
IS62WV1288ALL, IS62WV1288BLL, IS65WV1288BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Vd d Min. Max. Unit
Vo h OutputHIGHVoltage Io h = -0.1mA 1.65-2.2V 1.4 — V
Io h = -1mA 2.5-3.6V 2.2 — V
Vo L OutputLOWVoltage Io L = 0.1mA 1.65-2.2V — 0.2 V
Io L = 2.1mA 2.5-3.6V — 0.4 V
VI h
(2)
InputHIGHVoltage 1.65-2.2V 1.4 Vd d + 0.2 V
2.5-3.6V 2.2 Vd d + 0.3 V
VI L
(1)
InputLOWVoltage
1.65-2.2V –0.2 0.4 V
2.5-3.6V –0.2 0.6 V
IL I InputLeakage GND≤ VI n ≤ Vd d
–1 1 µA
IL o OutputLeakage
GND≤ Vo u t ≤ Vd d , OutputsDisabled –1 1 µA
Notes:
1.Undershoot: –1.0V for pulse width less than 10 ns. Not 100% tested.
2.Overshoot:V
d d + 1.0V for pulse width less than 10 ns. Not 100% tested.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
Vt e r m TerminalVoltagewithRespecttoGND –0.2toVd d +0.3 V
Vd d Vd d RelatedtoGND –0.2to+3.8 V
ts t g StorageTemperature –65to+150 °C
Pt PowerDissipation 1.0 W
Note:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothedevice.Thisisa
stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reli-
ability.
OPERATING RANGE (Vd d )
Range Ambient Temperature IS62WV1288ALL IS62/65WV1288BLL
Commercial 0°Cto+70°C 1.65V-2.2V 2.5V-3.6V
Industrial/A1 –40°Cto+85°C 1.65V-2.2V 2.5V-3.6V
Automotive –40°Cto+125°C 2.5V-3.6V
TRUTH TABLE
Mode WE CS1 CS2 OE I/O Operation Vd d Current
NotSelected X H X X High-Z Is B 1, Is B 2
(Power-down) X X L X High-Z Is B 1, Is B 2
OutputDisabled H L H H High-Z Ic c
Read H L H L do u t Ic c
Write L L H X dI n Ic c
P1-P3P4-P6P7-P9P10-P12P13-P15

IS62WV1288BLL-55QLI

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Buy IS62WV1288BLL-55QLI
Manufacturer:
ISSI
Description:
SRAM 1Mb 128Kx8 55ns Async SRAM
Lifecycle:
New from this manufacturer.
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