IXA12IF1200PB
preliminary
200 250 300 350 400 450 500
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
5
10
15
20
Q
rr
[μC]
I
F
[A]
V
F
[V]
di
F
/dt [A/μs]
T
VJ
=125°C
T
VJ
= 25°C
T
VJ
= 125°C
V
R
=600 V
5A
10 A
20 A
Fig. 1 Typ. forward current
versus V
F
Fig. 2 Typical reverse recov. charge
Q
rr
versus. di
F
/dt
200 250 300 350 400 450 500
8
12
16
20
24
I
RM
[A]
di
F
/dt [A/μs]
T
VJ
=125°C
V
R
= 600 V
5A
10 A
20 A
Fig.3 Typ: peak reverse current
I
RR
versus di
F
/dt
200 250 300 350 400 450 500
100
200
300
400
500
t
rr
[ns]
di
F
/dt [A/μs]
5A
10 A
20 A
T
VJ
= 125°C
V
R
=600V
Fig. 5 Typ. recovery time
t
rr
versus di
F
/dt
Fig. 6 Typ. recovery energy
E
rec
vs. di
F
/dt
200 250 300 350 400 450 500
0.1
0.2
0.3
0.4
0.5
0.6
E
rec
[mJ]
di
F
/dt [A/μs]
T
VJ
= 125°C
V
R
= 600 V
5A
10 A
20 A
Fig. 4 Dynamic parameters
Q
rr
,I
RM
versus T
VJ
Fig. 7 Typ. transient thermal impedance junction to case
Diode
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20110330aData according to IEC 60747and per semiconductor unless otherwise specified
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