LT3485-0/LT3485-1/
LT3485-2/LT3485-3
13
34850123fb
APPLICATIO S I FOR ATIO
WUU
U
Table 4. Recommended IGBTs
DRIVE BREAKDOWN COLLECTOR
VOLTAGE VOLTAGE CURRENT
PART (V) (V) (PULSED) (A) VENDOR
CY25BAH-8F 2.5 400 150 Renesas
CY25BAJ-8F 4 400 150 (408) 382-7500
www.renesas.com
GT8G133 4 400 150 Toshiba Semiconductor
(949) 623-2900
www.semicon.toshiba.co.jp/eng/
the capacitance closest to the terminal goes low but the
capacitance further from the terminal remains high. This
causes a small portion of the device to handle the full 100A
of current, which quickly destroys the device. The pull
down circuitry needs to pull down slower than the internal
RC time constant in the gate of the IGBT. This is easily
accomplished with a resistor in series with the IGBT drive,
which is integrated into the LT3485.
The LT3485’s integrated drive circuit is independent of the
charging function. The IGBT section draws its power from
the IGBTPWR pin. The rise and fall times are measured
using a 4000pF output capacitor. The typical 10% to 90%
rise time is 270ns. The drive pulls high to IGBTPWR. The
typical 90% to 10% fall time is 180ns. The drive pulls
down to 300mV. The IGBT driver pulls a peak of 150mA
when driving an IGBT and 2mA of quiescent current. In the
low state, the IGBT’s quiescent current is less than 0.1µA.
Table 4 is a list of recommended IGBT devices for strobe
applications. These three devices are all packaged in
8-lead TSSOP packages.
V
OUT
Monitor
The voltage output monitor is a new feature to monitor the
progress of capacitor charging with a microcontroller.
The monitor uses the flyback waveform to output a
voltage proportional to the output of the flyback converter.
The output monitor voltage range for the pin is 0V to 1V.
The 1V output corresponds with the charge cycle termi-
nating and the DONE pin going low. The voltage output
monitor is only functional when the circuit is charging
(DONE and CHARGE are high.)
GATE
EMITTER
3485 F06
Figure 6. IGBT Gate
LT3485-0/LT3485-1/
LT3485-2/LT3485-3
14
34850123fb
APPLICATIO S I FOR ATIO
WUU
U
Figure 7. Suggested Layout: Keep Electrical Path Formed by C1,
Transformer Primary and LT3485-0/LT3485-1/LT3485-2/LT3485-3 Short
Board Layout
The high voltage operation of the LT3485-0/LT3485-1/
LT3485-2/LT3485-3 demands careful attention to board
layout. You will not get advertised performance with
careless layout. Figure 7 shows the recommended com-
ponent placement. Keep the area for the high voltage end
of the secondary as small as possible. Also note the larger
than minimum spacing for all high voltage nodes in order
to meet breakdown voltage requirements for the circuit
board.
It is imperative to keep the electrical path formed
by C1, the primary of T1, and the LT3485-0/LT3485-1/
LT3485-2/LT3485-3 as short as possible.
If this path is
haphazardly made long, it will effectively increase the
leakage inductance of T1, which may result in an overvolt-
age condition on the SW pin.
C
OUT
PHOTOFLASH
CAPACITOR
CHARGE
DONE
IGBTPWR
V
BAT
C2 C3
T1
C1
V
MONT
IGBTIN
IGBTOUT
D1
(DUAL DIODE)
+
SECONDARY PRIMARY
V
IN
1 10
92
R1
3485 F07
3
811
74
5
6
LT3485-0/LT3485-1/
LT3485-2/LT3485-3
15
34850123fb
Figure 8. LT3485-0 Photoflash Charger Uses High Efficiency 4mm Tall Transformer
Figure 9. LT3485-1 Photoflash Charger Uses High Efficiency 3mm Tall Transformer
TYPICAL APPLICATIO S
U
C2
0.22µF
V
IN
2.5V TO 8V
DONE
CHARGE
C1
4.7µF
R1
100k
T1
1:10.2
V
BAT
1.8V TO 8V
320V
3485 F08
C
OUT
PHOTOFLASH
CAPACITOR
C1: 4.7µF, X5R OR X7R, 10V
C2: 0.22µF, X5R or X7R, 10V
T1: KIJIMA MUSEN PART# SBL-5.6-1, L
PRI
= 10µH, N = 10.2
D1: DIODES INC MMBD3004S DUAL DIODE CONNECTED IN SERIES
R1: PULL UP RESISTOR NEEDED IF DONE PIN USED
D1
CHARGE
V
IN
V
MONT
TO MICRO
TO GATE OF IGBT
IGBTOUT
IGBTPWR
IGBTIN
DONE
LT3485-0
GND
V
BAT
SW
C2
0.22µF
V
IN
2.5V TO 8V
DONE
CHARGE
C1
4.7µF
R1
100k
T1
1:10.2
V
BAT
1.8V TO 8V
320V
3485 F09
C
OUT
PHOTOFLASH
CAPACITOR
C1: 4.7µF, X5R OR X7R, 10V
C2: 0.22µF, X5R or X7R, 10V
T1: KIJIMA MUSEN PART# SBL-5.6S-1, L
PRI
= 24µH, N = 10.2
D1: DIODES INC MMBD3004S DUAL DIODE CONNECTED IN SERIES
R1: PULL UP RESISTOR NEEDED IF DONE PIN USED
D1
CHARGE
V
IN
V
MONT
TO MICRO
TO GATE OF IGBT
IGBTOUT
IGBTPWR
IGBTIN
DONE
LT3485-1
GND
V
BAT
SW

LT3485EDD-2#PBF

Mfr. #:
Manufacturer:
Analog Devices / Linear Technology
Description:
Switching Voltage Regulators Photoflash Cap Chrs w/ Out V Mon & Int
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union