MUBW50-06A7

© 2001 IXYS All rights reserved
1 - 8
Converter - Brake - Inverter Module (CBI2)
Input Rectifier Bridge D11 - D16
Symbol Conditions Maximum Ratings
V
RRM
1600 V
I
FAV
T
C
= 80°C; sine 180° 30 A
I
DAVM
T
C
= 80°C; rectangular; d = 1/3 29 A
I
FSM
T
VJ
= 25°C; t = 10 ms; sine 50 Hz 400 A
P
tot
T
C
= 25°C 120 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
F
I
F
= 50 A; T
VJ
= 25°C 1.5 1.8 V
T
VJ
= 125°C 1.6 V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C 0.2 mA
T
VJ
= 125°C2mA
t
rr
V
R
= 100 V;
I
F
= 20 A; di/dt = -20 A/µs 1 µs
R
thJC
(per diode) 1.06 K/W
Three Phase Brake Chopper Three Phase
Rectifier Inverter
V
RRM
= 1600V V
CES
= 600 V V
CES
= 600 V
I
DAVM
= 44 A I
C25
= 35 A I
C25
= 75 A
I
FSM
= 400 A V
CE(sat)
= 2.1 V V
CE(sat)
= 1.9 V
105
MUBW 50-06 A7
IXYS reserves the right to change limits, test conditions and dimensions.
NTC
D11 D13 D15
D12
D14
D16
1
23
D7
T7
T1
D1
T3
D3
T2
T4
T6
T5
D4
D2
D6
D5
21
22
7
6
4
5
16
15
18
17
20
19
11
10
23
24
14
8
9
12 13
Application: AC motor drives with
Input from single or three phase grid
Three phase synchronous or
asynchronous motor
electric braking operation
Features
High level of integration - only one power
semiconductor module required for the
whole drive
Fast rectifier diodes for enhanced EMC
behaviour
NPT IGBT technology with low
saturation voltage, low switching
losses, high RBSOA and short circuit
ruggedness
Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Temperature sense included
© 2001 IXYS All rights reserved
2 - 8
MUBW 50-06 A7
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
J
= 125°C)
V
0
= 1.0 V; R
0
= 12 m
T1 - T6 / D1 - D6
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.82 V; R
0
= 28 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 0.89 V; R
0
= 8 m
T7 / D7
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 0.9 V; R
0
= 65 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.07 V; R
0
= 23 m
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.131 J/K; R
th1
= 0.851 K/W
C
th2
= 0.839 J/K; R
th2
= 0.209 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.221 J/K; R
th1
= 0.382 K/W
C
th2
= 1.377 J/K; R
th2
= 0.119 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.116 J/K; R
th1
= 0.973 K/W
C
th2
= 0.88 J/K; R
th2
= 0.217 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.108 J/K; R
th1
= 0.79 K/W
C
th2
= 0.921 J/K; R
th2
= 0.209 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
Output Inverter T1 - T6
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 600 V
V
GES
Continuous
±
20 V
V
GEM
Transient
±
30 V
I
C25
T
C
= 25°C75A
I
C80
T
C
= 80°C50A
RBSOA V
GE
=
±
15 V; R
G
= 22 ; T
VJ
= 125°CI
CM
= 100 A
Clamped inductive load; L = 100 µH V
CEK
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 22 ; T
VJ
= 125°C10µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 250 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 50 A; V
GE
= 15 V; T
VJ
= 25°C 1.9 2.4 V
T
VJ
= 125°C 2.2 V
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.8 mA
T
VJ
= 125°C 0.7 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
50 ns
t
r
55 ns
t
d(off)
300 ns
t
f
30 ns
E
on
2.3 mJ
E
off
1.7 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz 2800 pF
Q
Gon
V
CE
= 300V; V
GE
= 15 V; I
C
= 50 A 120 nC
R
thJC
(per IGBT) 0.5 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 50 A
V
GE
=
±
15 V; R
G
= 22
Output Inverter D1 - D6
Symbol Conditions Maximum Ratings
I
F25
T
C
= 25°C72A
I
F80
T
C
= 80°C45A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 50 A; V
GE
= 0 V; T
VJ
= 25°C 1.8 V
T
VJ
= 125°C 1.3 V
I
RM
I
F
= 25 A; di
F
/dt = -500 A/µs; T
VJ
= 125°C25A
t
rr
V
R
= 300 V; V
GE
= 0 V 90 ns
R
thJC
(per diode) 1.19 K/W
© 2001 IXYS All rights reserved
3 - 8
MUBW 50-06 A7
Brake Chopper T7
Symbol Conditions Maximum Ratings
V
CES
T
VJ
= 25°C to 150°C 600 V
V
GES
Continuous
±
20 V
V
GEM
Transient
±
30 V
I
C25
T
C
= 25°C35A
I
C80
T
C
= 80°C25A
RBSOA V
GE
=
±
15 V; R
G
= 47 ; T
VJ
= 125°CI
CM
= 40 A
Clamped inductive load; L = 100 µH V
CEK
V
CES
t
SC
V
CE
= V
CES
; V
GE
=
±
15 V; R
G
= 47 ; T
VJ
= 125°C10µs
(SCSOA) non-repetitive
P
tot
T
C
= 25°C 125 W
Symbol Conditions Characteristic Values
(T
VJ
= 25°C, unless otherwise specified)
min. typ. max.
V
CE(sat)
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25°C 2.1 2.6 V
T
VJ
= 125°C 2.4 V
V
GE(th)
I
C
= 0.5 mA; V
GE
= V
CE
4.5 6.5 V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25°C 0.5 mA
T
VJ
= 125°C 0.3 mA
I
GES
V
CE
= 0 V; V
GE
=
±
20 V 200 nA
t
d(on)
50 ns
t
r
60 ns
t
d(off)
300 ns
t
f
30 ns
E
on
1.15 mJ
E
off
0.85 mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MH z 1100 pF
Q
Gon
V
CE
= 300 V; V
GE
= 15 V; I
C
= 25 A 65 nC
R
thJC
1.0 K/W
Brake Chopper D7
Symbol Conditions Maximum Ratings
V
RRM
T
VJ
= 25°C to 150°C 600 V
I
F25
T
C
= 25°C22A
I
F80
T
C
= 80°C15A
Symbol Conditions Characteristic Values
min. typ. max.
V
F
I
F
= 25 A; T
VJ
= 25°C 2.5 V
T
VJ
= 125°C 1.8 V
I
R
V
R
= V
RRM
;
T
VJ
= 25°C 0.06 mA
T
VJ
= 125°C 0.07 mA
I
RM
I
F
= 10 A; di
F
/dt = -400 A/µs; T
VJ
= 125°C11A
t
rr
V
R
= 300 V 80 ns
R
thJC
3.2 K/W
Inductive load, T
VJ
= 125°C
V
CE
= 300 V; I
C
= 25 A
V
GE
=
±
15 V; R
G
= 47

MUBW50-06A7

Mfr. #:
Manufacturer:
Littelfuse
Description:
Discrete Semiconductor Modules 50 Amps 600V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet