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IRAM136-3063B

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
IRAM136-3063B
Inverter Section Switching Characteristics @ T
J
= 25°C
Symbol Parameter Min Typ Max Units Conditions
E
ON
Turn-On Switching Loss --- 550 870
E
OFF
Turn-Off Switching Loss --- 240 300
E
TOT
Total Switching Loss --- 790 1170
E
REC
Diode Reverse Recovery energy --- 65 125
t
RR
Diode Reverse Recovery time --- 50 --- ns
E
ON
Turn-On Switching Loss --- 830 1180
E
OFF
Turn-off Switching Loss --- 400 550
E
TOT
Total Switching Loss --- 1230 1730
E
REC
Diode Reverse Recovery energy --- 120 205
t
RR
Diode Reverse Recovery time --- 140 --- ns
Q
G
Turn-On IGBT Gate Charge --- 72 108 nC
I
C
=20A, V
+
=400V, V
GE
=15V
RBSOA Reverse Bias Safe Operating Area
T
J
=150°C, I
C
=60A, V
P
=600V
V
+
= 480V
V
CC
=+15V to 0V See CT3
SCSOA Short Circuit Safe Operating Area 10 --- --- μs
T
J
=150°C, V
P
=600V,
V
+
= 500V,
V
CC
=+15V to 0V See CT2
FULL SQUARE
μJ
μJ
I
C
=15A, V
+
=400V
V
CC
=15V, L=2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
I
C
=15A, V
+
=400V
V
CC
=15V, L=2mH, T
J
=125°C
Energy losses include "tail" and
diode reverse recovery
See CT1
Recommended Operating Conditions Driver Function
Symbol Definition Min Typ Max Units
V
B1,2,3
High side floating supply voltage
V
S
+12 V
S
+15 V
S
+20
V
S1,2,3
High side floating supply offset voltage Note 4 --- 400
V
CC
Low side and logic fixed supply voltage 12 15 20
V
T/ITRIP
T/I
TRIP
input voltage V
SS
---
V
SS
+5
V
IN
Logic input voltage LIN, HIN
V
SS
---
V
SS
+5
V
HIN High side PWM pulse width 1 --- --- μs
Deadtime External dead time between HIN and LIN 2 --- --- μs
Note 3: For more details, see IR21363 data sheet
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The V
S
offset is tested with all supplies biased at
15V differential
V
V
Note 4: Logic operational for V
s
from COM-5V to COM+600V. Logic state held for V
s
from COM-5V to COM-V
BS
.
(please refer to DT97-3 for more details)
4 www.irf.com
IRAM136-3063B
Static Electrical Characteristics Driver Function
Symbol Definition Min Typ Max Units
V
IH
Logic "0" input voltage 3.0 --- --- V
V
IL
Logic "1" input voltage --- --- 0.8 V
V
CCUV+,
V
BSUV+
V
CC
and V
BS
supply undervoltage positive going threshold
10.6 11.1 11.6 V
V
CCUV-,
V
BSUV-
V
CC
and V
BS
supply undervoltage negative going threshold
10.4 10.9 11.4 V
V
CCUVH,
V
BSUVH
V
CC
and V
BS
supply undervoltage lock-out hysteresis
--- 0.2 --- V
V
IN,Clamp
Input Clamp Voltage (HIN, LIN, T/I
TRIP
) I
IN
=10μA
4.9 5.2 5.5 V
I
QBS
Quiescent V
BS
supply current V
IN
=0V
--- --- 165 μA
I
QCC
Quiescent V
CC
supply current V
IN
=0V
--- --- 3.35 mA
I
LK
Offset Supply Leakage Current --- --- 60 μA
I
IN+
Input bias current V
IN
=5V
--- 200 300 μA
I
IN-
Input bias current V
IN
=0V
--- 100 220 μA
I
TRIP+
I
TRIP
bias current V
ITRIP
=5V
--- 30 100 μA
I
TRIP-
I
TRIP
bias current V
ITRIP
=0V
--- 0 1 μA
V(I
TRIP
)I
TRIP
threshold Voltage
440 490 540 mV
V(I
TRIP
,HYS) I
TRIP
Input Hysteresis
--- 70 --- mV
V
BIAS
(V
CC
, V
BS1,2,3
)=15V, unless otherwise specified. The V
IN
and I
IN
parameters are referenced to COM/I
TRIP
and are
applicable to all six channels. (Note 3)
Dynamic Electrical Characteristics
Symbol Parameter Min Typ Max Units Conditions
T
ON
Input to Output propagation turn-
on delay time (see fig.11)
--- 600 --- ns
T
OFF
Input to Output propagation turn-
off delay time (see fig. 11)
--- 700 --- ns
T
FLIN
Input Filter time (HIN, LIN) 100 200 --- ns
V
IN
=0 & V
IN
=5V
T
BLT-Trip
I
TRIP
Blancking Time
100 150 ns
V
IN
=0 & V
IN
=5V
D
T
Dead Time (V
BS
=V
DD
=15V)
220 290 360 ns
V
BS
=V
CC
=15V
M
T
Matching Propagation Delay Time
(On & Off)
--- 40 75 ns
V
CC
= V
BS
= 15V, external dead
time> 400ns
T
ITrip
I
Trip
to six switch to turn-off
propagation delay (see fig. 2)
--- --- 3.75 μs
V
CC
=V
BS
= 15V, I
C
=15A, V
+
=400V
--- 34 ---
T
C
= 25°C
--- 29 ---
T
C
= 100°C
Post I
Trip
to six switch to turn-off
clear time (see fig. 2)
Driver only timing unless otherwise specified.)
T
FLT-CLR
ms
V
CC
=V
BS
= 15V, I
C
=15A, V
+
=400V
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IRAM136-3063B
Thermal and Mechanical Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
th(J-C)
Thermal resistance, per IGBT ---
1.5 1.7
R
th(J-C)
Thermal resistance, per Diode ---
2.5 ---
R
th(C-S)
Thermal resistance, C-S ---
0.1 ---
C
D
Creepage Distance 3.5
--- ---
mm See outline Drawings
°C/W
Flat, greased surface. Heatsink
compound thermal conductivity
1W/mK
Internal Current Sensing Resistor - Shunt Characteristics
Symbol Parameter Min Typ Max Units Conditions
R
Shunt
Resistance 9.4 9.6 9.8 m
T
C
= 25°C
T
Coeff
Temperature Coefficient 0 --- 200 ppm/°C
P
Shunt
Power Dissipation --- --- 4.5 W
-40°C < T
C
< 100°C
T
Range
Temperature Range -20 --- 125 °C
Internal NTC - Thermistor Characteristics
Parameter Definition Min Typ Max Units Conditions
R
25
Resistance 97 100 103 k
T
C
= 25°C
R
125
Resistance 2.25 2.52 2.8 k
T
C
= 125°C
B B-constant (25-50°C) 4165 4250 4335 k
R
2
= R
1
e
[B(1/T2 - 1/T1)]
Temperature Range -40 --- 125 °C
Typ. Dissipation constant --- 1 --- mW/°C
T
C
= 25°C
Input-Output Logic Level Table
I
TRIP
U,V,W
001
V
+
0100
011X
1XXX
Ho
Lo
U,V,W
IC
Driver
V
+
Hin1,2,3
Lin1,2,3
(13,14,15)
(16,17,18)
(2,5,8)
HIN1,2,3 LIN1,2,3
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P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

IRAM136-3063B

Mfr. #:
Buy IRAM136-3063B
Manufacturer:
Infineon / IR
Description:
Motor / Motion / Ignition Controllers & Drivers 30A 600V ING PWR MOD INT SHUNT HYBRID
Lifecycle:
New from this manufacturer.
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