2001 Oct 22 2
NXP Semiconductors Product data sheet
PNP general purpose double transistor PIMT1
FEATURES
• 600 mW total power dissipation
• Low current (max. 100 mA)
• Low voltage (max. 40 V)
• Reduces number of components and required
PCB
area
• Reduced pick and place costs.
APPLICATIONS
• General purpose switching and amplification.
DESCRIPTION
PNP transistor pair in an SC-74 (SOT457) plastic package.
MARKING
PINNING
TYPE NUMBER MARKING CODE
PIMT1 M1
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
MAM457
132
TR1
TR2
6
4
5
Top view
123
654
Fig.1 Simplified outline (SC74; SOT457) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor
V
CBO
collector-base voltage open emitter − −50 V
V
CEO
collector-emitter voltage open base − −40 V
V
EBO
emitter-base voltage open collector − −5 V
I
C
collector current (DC) − −100 mA
I
CM
peak collector current − −200 mA
I
BM
peak base current − −200 mA
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 300 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
amb
≤ 25 °C; note 1 − 600 mW
