MJ4032
MJ4035
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
■ SGS-THOMSON PREFERRED SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
■ MONOLITHIC DARLINGTON
CONFIGURATION
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
■ GENERAL PURPOSE SWITCHING
■ GENERAL PURPOSE AMPLIFIERS
DESCRIPTION
The MJ4035 is silicon epitaxial-base NPN power
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in general purpose and
amplifier applications.
The complementary PNP type is the MJ4032.
INTERNAL SCHEMATIC DIAGRAM
June 1997
1
2
TO-3
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
PNP MJ4032
NPN MJ4035
V
CBO
Collector-Base Voltage (I
E
= 0) 100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 100 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 5 V
I
C
Collector Current 16 A
I
B
Base Current 0.5 A
P
tot
Total Dissipation at T
c
≤ 25
o
C 150 W
T
stg
Storage Temperature -65 to 200
o
C
T
j
Max. Operating Junction Temperature 200
o
C
For PNP types voltage and current values are negative.
R
1
Typ. = 6 KΩ R
2
Typ. = 55 Ω
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