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Document Number: 81181
154 Rev. 1.2, 07-Jan-10
4N35, 4N36, 4N37
Vishay Semiconductors
Optocoupler, Phototransistor Output,
with Base Connection
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to wave profile for soldering condditions for through hole devices (DIP).
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2)
Indicates JEDEC registered value.
COUPLER
Comparative tracking index DIN IEC 112/VDE 0303, part 1 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(2)
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Junction capacitance V
R
= 0 V, f = 1 MHz C
j
50 pF
Forward voltage
(2)
I
F
= 10 mA V
F
1.3 1.5 V
I
F
= 10 mA, T
amb
= - 55 °C V
F
0.9 1.3 1.7 V
Reverse current
(2)
V
R
= 6 V I
R
0.1 10 μA
Capacitance V
R
= 0 V, f = 1 MHz C
O
25 pF
OUTPUT
Collector emitter breakdown
voltage
(2)
I
C
= 1 mA
4N35 BV
CEO
30 V
4N36 BV
CEO
30 V
4N37 BV
CEO
30 V
Emitter collector breakdown
voltage
(2)
I
E
= 100 μA BV
ECO
7V
OUTPUT
Collector base breakdown
voltage
(2)
I
C
= 100 μA, I
B
= 1 μA
4N35 BV
CBO
70 V
4N36 BV
CBO
70 V
4N37 BV
CBO
70 V
Collector emitter leakage current
(2)
V
CE
= 10 V, I
F
= 0
4N35 I
CEO
550nA
4N36 I
CEO
550nA
V
CE
= 10 V, I
F
= 0 4N37 I
CEO
550nA
V
CE
= 30 V, I
F
= 0,
T
amb
= 100 °C
4N35 I
CEO
500 μA
4N36 I
CEO
500 μA
4N37 I
CEO
500 μA
Collector emitter capacitance V
CE
= 0 C
CE
6pF
COUPLER
Resistance, input output
(2)
V
IO
= 500 V R
IO
10
11
Ω
Capacitance, input output f = 1 MHz C
IO
0.6 pF
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
