BB207 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 7 September 2011 2 of 8
NXP Semiconductors
BB207
FM variable capacitance double diode
4. Marking
[1] * = p: made in Hong Kong.
* = w: made in China.
5. Limiting values
6. Characteristics
Table 3. Marking
Type number Marking code
[1]
BB207 *13
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
V
R
continuous reverse voltage - 15 V
I
F
continuous forward current - 20 mA
T
stg
storage temperature 55 +150 C
T
j
junction temperature 55 +125 C
Table 5. Electrical Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
I
R
reverse current V
R
=15V; see Figure 2 10 nA
V
R
=15V; T
j
=85C; see Figure 2 200 nA
r
s
diode series resistance f = 100 MHz; V
R
=3V 0.2 0.4
C
d
diode capacitance V
R
= 1 V; f = 1 MHz; see Figure 1 76 81 86 pF
V
R
= 3 V; f = 1 MHz; see Figure 1 50.5 pF
V
R
= 7.5 V; f = 1 MHz; see Figure 1 25.5 27.6 29.7 pF
V
R
= 8 V; f = 1 MHz; see Figure 1 26.3 pF
capacitance ratio f = 1 MHz 2.6 3.3
C
d1V
C
d 7.5V
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